Vacuum Cluster Processing for Contamination-Free Semiconductor Surfaces
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Solution Overview
Problem
Existing methods for processing semiconductor substrates in separate process devices lead to decreased quality due to contamination during transportation between steps, compromising the high quality of functional layers, and increasing production efficiency decreases the quality of the end product.
Innovation Solution
A method using a cluster apparatus with a transport chamber and multiple process reactors under vacuum atmosphere, where plasma treatment, plasma enhanced deposition, and atomic layer deposition are used to prepare, interface, and coat substrates, maintaining vacuum conditions throughout the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If substrates are transported between separate process devices for surface preparation, interface layer deposition, and functional layer deposition, then each process step can be performed with dedicated equipment, but the substrate surface is exposed to contamination from ambient atmosphere during transport
Solution Approach 1:
The patent combines multiple separate process devices (surface preparation, interface layer deposition, functional layer deposition) into a single integrated process device with multiple chambers. This merging allows substrates to remain in vacuum throughout the entire processing sequence without exposure to ambient atmosphere, eliminating contamination while maintaining dedicated processing zones for each function.
Solution Approach 2:
The patent implements a nested chamber structure where multiple process chambers (surface preparation chamber, interface layer deposition chamber, functional layer deposition chamber) are arranged in sequence within a single vacuum environment. Each chamber is equipped with its own processing equipment, creating a nested configuration that enables multi-step processing without breaking vacuum.
2Productivity
If multiple substrates are processed simultaneously in one process device, then productivity increases, but the quality of the functional layer deteriorates due to increased contamination exposure time
Solution Approach 1:
The integrated process device allows multiple substrates to be processed simultaneously in different chambers while maintaining vacuum for all substrates throughout the entire process sequence. This eliminates the contamination exposure problem that would otherwise limit multi-substrate processing, enabling both high productivity and high quality.
Solution Approach 2:
The patent enables continuous vacuum processing for multiple substrates through the integrated chamber system. While one substrate is being processed in one chamber, other substrates can be processed in parallel in other chambers, all maintaining continuous vacuum protection. This continuous action eliminates idle time and contamination exposure, simultaneously improving throughput and quality.
3Measurement precision
If separate process devices are used for each processing step, then process control for each step can be optimized independently, but the total processing time increases due to sequential transport and processing
Solution Approach 1:
The patent merges multiple process chambers into a single integrated device, allowing independent optimization of each processing step while eliminating transport time between separate devices. Each chamber can maintain its own optimized process parameters while substrates move quickly between chambers in vacuum, reducing total processing time without sacrificing control precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Maintains substrate quality by preventing contamination during transport and increases process efficiency by allowing simultaneous processing of multiple substrates in specialized reactors, balancing quality and productivity.
Implementation Method 1
The surface preparation step comprises pre-cleansing the surface of the substrate by utilizing plasma treatment on the surface of the substrate
Implementation Method 2
The interface step comprises depositing the interface layer on the prepared substrate surface by utilizing plasma enhanced deposition method
Implementation Method 3
The step for providing the functional material layer comprises depositing the functional material layer on the prepared substrate surface by utilizing atomic layer deposition method
Data Source
AI summary
A method and apparatus for processing a surface of a substrate with a cluster apparatus including a transport chamber and two or more process reactors connected to the transport chamber. The method further includes subjecting the surface of the substrate to a surface preparation step for providing a prepared substrate surface, providing an interface layer on the prepared substrate surface of the substrate for forming an interfaced substrate surface, and providing a functional layer on the interfaced substrate surface of the substrate. The process steps are carried out in at least two different process reactors connected to transport chamber the substrate is transported between the at least two process reactors via the transport chamber under vacuum atmosphere.