Vacuum Cluster Tool for Epitaxial Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing processes face challenges with contamination of substrate surfaces during epitaxial deposition, leading to degraded electrical properties and low throughput, especially when handling advanced device integration schemes.
Innovation Solution
An integrated system comprising a cluster tool with multiple process chambers for vacuum transfer, including pre-clean, etch, and epitaxial deposition chambers, which enables sequential cleaning, etching, and deposition processes without exposing substrates to atmosphere, reducing contamination and improving epitaxial layer quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If substrates are exposed to ambient environment during processing, then ease of operation is improved, but contamination of substrate surfaces occurs leading to degraded electrical properties
Solution Approach 1:
The patent implements a vacuum-based cluster tool system where substrates are transferred through multiple process chambers (pre-clean, etch, deposition chambers) without exposure to ambient atmosphere. The entire processing sequence occurs in a controlled vacuum environment, preventing contamination from ambient contaminants while maintaining operational efficiency through automated robotic transfer mechanisms.
2Ease of operation
If multiple processing steps are performed separately, then ease of operation is improved, but throughput is reduced due to repeated exposure to atmosphere
Solution Approach 1:
The patent combines multiple processing steps (pre-clean, etch, and epitaxial deposition) into a single integrated vacuum cluster tool system. Substrates undergo sequential processing in different chambers without breaking vacuum or exposing to atmosphere, enabling continuous processing and high throughput while maintaining operational simplicity through centralized control.
Solution Approach 2:
The vacuum-based cluster tool enables continuous processing where substrates are transferred through pre-clean, etch, and deposition chambers without interruption or exposure to ambient environment. The automated robotic transfer system maintains continuous operation, eliminating idle time and maximizing throughput while keeping the system easy to operate.
3Manufacturing precision
If advanced device integration schemes are implemented, then manufacturing precision is improved, but throughput is reduced due to low processing efficiency
Solution Approach 1:
The patent integrates multiple precision processing steps (pre-clean, etch, and epitaxial deposition) into a single vacuum cluster tool system, enabling advanced device fabrication with high manufacturing precision while maintaining high throughput through continuous vacuum-based processing without repeated atmosphere exposure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integrated system effectively reduces contamination and enhances the quality of epitaxial layers by maintaining a vacuum environment throughout processing, resulting in improved semiconductor devices with better electrical properties and increased manufacturing efficiency.
Implementation Method 1
maintaining a vacuum environment throughout processing
Implementation Method 2
epitaxial deposition on substrate surfaces
Data Source
AI summary
Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.