Vacuum Plasma Substrate Bonding with In-Situ H2O Surface Activation
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Solution Overview
Problem
Existing semiconductor fabrication processes face challenges in reducing process time, increasing bonding efficiency, and controlling costs, particularly in substrate bonding processes that require plasma surface treatment and direct bonding of substrates.
Innovation Solution
A plasma processing apparatus and substrate bonding system that maintains a vacuum state in the plasma process chamber, utilizes H2O supply and RF power to form hydroxyl groups on substrate surfaces, includes a cleaning apparatus for surface preparation, and employs a bonding apparatus for direct bonding, all while minimizing equipment complexity and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a plasma surface treatment is performed on substrates before bonding, then bonding efficiency is improved, but process time increases
Solution Approach 1:
The patent combines the plasma surface treatment process with the substrate bonding process into a single integrated chamber. The plasma treatment is performed in-situ before bonding without removing the substrates from the chamber, merging two separate processes into one continuous operation. This eliminates transfer time and maintains vacuum conditions throughout, resolving the contradiction between improving bonding efficiency and reducing process time.
Solution Approach 2:
The plasma surface treatment and bonding processes are performed continuously in sequence within the same vacuum chamber without interruption or atmospheric exposure. The useful action (surface treatment and bonding) continues uninterrupted, maximizing productivity while minimizing idle time and maintaining optimal conditions for both processes.
2Loss of time
If a vacuum state is maintained in the plasma process chamber, then process time is reduced, but equipment complexity increases
Solution Approach 1:
The patent merges the plasma treatment chamber and bonding chamber into a single integrated vacuum chamber. This eliminates the need for separate vacuum systems, transfer mechanisms, and multiple chamber seals that would be required if the processes were performed in separate chambers. By combining functions, the system maintains vacuum continuously while actually reducing overall equipment complexity.
Solution Approach 2:
The plasma process chamber is designed to perform multiple functions: plasma surface treatment, substrate heating, and bonding. This multi-functionality eliminates the need for dedicated separate chambers for each process, reducing the number of vacuum systems and mechanical components required, thereby reducing equipment complexity while maintaining continuous vacuum operation.
3Strength
If H2O is supplied to the process space for hydroxyl group formation, then bonding force is improved, but process complexity increases
Solution Approach 1:
The plasma process chamber performs multiple functions including plasma generation, heating, and H2O supply for hydroxyl group formation. By integrating these functions into a single chamber with unified control, the system achieves improved bonding force through hydroxyl group formation without requiring separate dedicated equipment for each function, thereby limiting the increase in process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system reduces process time, enhances bonding efficiency, and lowers costs by maintaining a vacuum state, forming hydroxyl groups efficiently, and integrating a cleaning process to improve yield and bonding force, thereby optimizing substrate bonding processes.
Implementation Method 1
generating plasma on the first substrate
Implementation Method 2
a plasma electrode to which a radio-frequency (RF) power is configured to be applied
Implementation Method 3
a plasma process chamber that includes a process space; a load-lock chamber connected to the process space; a first vacuum pump configured to adjust a pressure of the load-lock chamber
Data Source
AI summary
Plasma processing apparatuses, substrate bonding systems, and substrate bonding methods are provided. The plasma processing apparatus includes a plasma process chamber that includes a process space, a load-lock chamber connected to the process space, a first vacuum pump that adjusts a pressure of the load-lock chamber, a process gas supply that supplies the process space with a process gas, and an H2O supply that supplies the process space with H2O. The plasma process chamber includes a chuck that supports a substrate and a plasma electrode to which a radio-frequency (RF) power is applied.