Vacuum Plate Gas Buffer Structure for Clean Substrate Developing
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Solution Overview
Problem
Existing developing methods, particularly the puddle method, result in contamination of the lower surface of substrates due to developer introduction, leading to potential substrate adsorption malfunction.
Innovation Solution
A developing apparatus featuring a buffer plate with a gas flow groove, a vacuum plate with gas supply holes and vacuum slots, and a slit block forming a gas flow path, ensuring a 90% contact area and controlled gas flow to prevent developer contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the substrate is held on the vacuum plate with high contact area (90% or more), then the substrate stability and vacuum holding are improved, but the risk of developer contamination on the lower surface increases due to surface tension in the puddle method
Solution Approach 1:
A buffer space is introduced between the vacuum plate and the substrate lower surface, filled with gas that acts as an intermediary barrier. This gas layer prevents direct contact between the developer and the substrate lower surface, blocking contamination while maintaining vacuum holding through the vacuum holes in the vacuum plate.
Solution Approach 2:
Gas is supplied through the gas supply hole into the buffer space, creating a pneumatic barrier that prevents developer contamination. The gas pressure is controlled to maintain the buffer space while allowing the vacuum plate to hold the substrate through vacuum holes, resolving the contradiction between holding stability and contamination prevention.
2Object-affected harmful factors
If a buffer space is introduced to prevent contamination, then developer contamination on the lower surface is reduced, but the device complexity increases due to additional components like gas supply holes and flow paths
Solution Approach 1:
The vacuum plate serves multiple functions: it provides vacuum holding through vacuum holes, supplies gas through the gas supply hole to create the buffer space, and maintains substrate positioning. The buffer space itself serves dual purposes of preventing contamination and stabilizing the substrate during the developing process.
Solution Approach 2:
The gas supply system is integrated into the vacuum plate structure, with the gas supply hole directly formed in the vacuum plate. The buffer space is created by combining the vacuum plate, substrate, and gas flow paths, merging multiple protective functions into a unified structure rather than adding separate components.
3Stress or pressure
If the cross-sectional area of the second flow path is reduced to 70% or less of the gas supply hole area, then gas pressure is maintained to prevent contamination, but the gas flow rate decreases
Solution Approach 1:
The cross-sectional area of the second flow path is specifically controlled to be 70% or less of the gas supply hole area. This parameter change optimizes the balance between maintaining sufficient gas pressure to prevent developer contamination and allowing adequate gas flow rate to sustain the buffer space throughout the developing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively prevents developer contamination on the substrate's lower surface by maintaining a high gas pressure and uniform gas flow, reducing the risk of substrate warpage and adsorption malfunctions.
Implementation Method 1
a vacuum plate fixedly installed on an upper surface of the buffer plate and having a gas supply hole in fluid communication with the gas flow groove, the vacuum plate including a plurality of vacuum holes for holding a substrate
Implementation Method 2
a buffer plate fixedly installed on the body and including a gas flow groove through which a gas is flowable
Implementation Method 3
Existing developing apparatuses face challenges in preventing contamination of the lower surface of substrates during the developing process, particularly in the puddle method, where surface tension can cause developers to be introduced onto the lower surface
Data Source
AI summary
A developing apparatus includes a body; a buffer plate on the body and including a gas flow path; a vacuum plate on an upper surface of the buffer plate and having a gas supply hole in fluid communication with the gas flow path; and a slit block on an edge of the vacuum plate, the slit block and the vacuum plate forming a flow path for gas from the gas supply hole, wherein a substrate is holdable on the vacuum plate, a contact area between the substrate and the vacuum plate being 90% or more of an area of the substrate, the slit block and the vacuum plate form a buffer space and an inclined first flow path in fluid communication with the buffer space, and the slit block and an edge of the substrate forms a second flow path in fluid communication with the first flow path.


