Vacuum Pump Deposit Removal With Feedback Etch Gas Control
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Solution Overview
Problem
Existing vacuum pumps used in semiconductor manufacturing face issues with product deposition that interferes with normal rotation due to insufficient removal methods, leading to potential corrosion of the base material from excessive use of hydrogen halide, fluorine, chlorine trifluoride, or fluorine radicals.
Innovation Solution
A product removal apparatus with a sensor to measure temperature, film thickness, or vibration frequency, coupled with a control device to regulate the supply of hydrogen halide, fluorine, chlorine trifluoride, or fluorine radicals based on calculated rate of temperature increase, ensuring efficient removal while preventing over-etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If hydrogen halide, fluorine, chlorine, chlorine trifluoride, or fluorine radicals are supplied to the vacuum pump to remove deposited products, then product removal efficiency is improved, but corrosion of the base material occurs due to over-etching
Solution Approach 1:
The patent implements a feedback control mechanism where a sensor continuously monitors parameters (temperature, vibration frequency, or film thickness) inside the vacuum pump during the product removal process. The control device receives this real-time data and dynamically adjusts the gas supply amount from the gas supplier. When the sensor detects that products have been sufficiently removed (indicated by temperature stabilization, vibration frequency returning to normal, or film thickness reaching threshold), the control device automatically reduces or stops gas supply to prevent over-etching and corrosion of the base material.
Solution Approach 2:
The patent changes the operational parameters of the gas supply system based on real-time monitoring data. The control device adjusts the flow rate, concentration, or supply duration of hydrogen halide, fluorine, chlorine, chlorine trifluoride, or fluorine radicals according to sensor feedback. This dynamic parameter adjustment ensures optimal product removal while preventing excessive exposure that would cause corrosion, thereby resolving the contradiction between removal efficiency and material protection.
2Quantity of substance
If too much hydrogen halide, fluorine, chlorine, chlorine trifluoride, or fluorine radical is supplied to the vacuum pump, then product removal is enhanced, but the base material of the vacuum pump is corroded by over-etching
Solution Approach 1:
The sensor continuously monitors the state of the vacuum pump interior during product removal. When the monitored parameter (temperature, vibration frequency, or film thickness) indicates that sufficient product has been removed, the control device receives this feedback and automatically adjusts the gas supply amount downward or stops supply. This prevents excessive chemical exposure that would cause base material corrosion, thereby protecting the vacuum pump structure while achieving complete product removal.
3Object-affected harmful factors
If too little hydrogen halide, fluorine, chlorine, chlorine trifluoride, or fluorine radical is supplied to the vacuum pump, then corrosion of the base material is suppressed, but products deposited in the vacuum pump are not sufficiently removed
Solution Approach 1:
The feedback control system ensures that sufficient gas is supplied to achieve complete product removal. The sensor monitors parameters that indicate product presence (elevated temperature from reaction heat, abnormal vibration frequency, or measurable film thickness). As long as products remain, the control device maintains adequate gas supply to continue removal. Only when the sensor confirms sufficient removal does the control device reduce or stop gas supply, thereby preventing corrosion. This resolves the contradiction by ensuring minimum effective dosage while avoiding excess.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes deposited products in vacuum pumps while minimizing corrosion by stopping gas supply when the rate of temperature increase decreases, ensuring complete product removal without damaging the pump components.
Implementation Method 1
a sensor for measuring the temperature of the inside of a vacuum pump
Implementation Method 2
Hydrogen halide, fluorine, chlorine, chlorine trifluoride, and fluorine radicals remove products deposited in the vacuum pump
Implementation Method 3
the control device controls the gas supplier so that the supply of the gas to the vacuum pump is stopped depending on a rate of temperature increase calculated from the temperature measured by the sensor
Data Source
Figure 1
Figure 2
Figure 3~4
AI summary
Product removal apparatus, treatment system, and product removal method for removing the products deposited inside a vacuum pump and also suppressing corrosion of the base material of the vacuum pump. The product removal apparatus includes: a sensor for measuring the temperature of the inside of a vacuum pump, the thickness of a film of a product in a flow path in the vacuum pump, or the vibration frequency of the vacuum pump; a gas supplier for supplying a gas containing hydrogen halide, fluorine, chlorine, chlorine trifluoride, or fluorine radicals to the vacuum pump; and a control device. The control device controls the gas supplier so that the supply of the gas to the vacuum pump is stopped depending on a rate of temperature increase calculated from the temperature measured by the sensor, or on the film thickness, or on the vibration frequency.