VAlC Alloy Gate Electrode Resistivity Control
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Solution Overview
Problem
Current semiconductor fabrication methods face challenges in achieving the desired resistivity and work function levels for semiconductor devices, particularly in forming gate electrodes with optimal aluminum content for high integration density and performance.
Innovation Solution
The method involves an atomic layer deposition process using a first precursor containing an organoaluminum compound and a second precursor with a vanadium-halogen compound, such as VCl4, to form a VAlC alloy layer on a substrate, adjusting the aluminum content to control the resistivity and work function of the alloy layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fabrication methods are used to form gate electrodes, then the manufacturing process is simpler, but the resistivity and work function levels cannot be precisely controlled
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using organoaluminum compounds with specific R groups (alkyl, alkenyl, or alkynyl) to precisely control the aluminum content in the VAlC alloy layer. By varying the R groups and their combinations, the patent achieves precise control over the alloy's resistivity and work function, directly resolving the contradiction between manufacturing precision and process complexity.
Solution Approach 2:
The patent employs composite material formation by creating a VAlC alloy layer with specific compositional ratios of vanadium and aluminum. The use of organoaluminum compounds as precursors enables the formation of a composite alloy structure that achieves target resistivity and work function values, thereby improving manufacturing precision through material composition control.
2Productivity
If higher integration density is achieved, then device performance is enhanced, but process margins are reduced
Solution Approach 1:
The patent enables tighter process control by precisely adjusting the aluminum content through organoaluminum compound selection, which allows for reduced process margins while maintaining high integration density. The ability to control alloy composition at the molecular level provides the precision needed for advanced node fabrication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of semiconductor devices with tailored resistivity and work function levels, suitable for gate-all-around type field effect transistors, enhancing integration density and performance while reducing process margins.
Implementation Method 1
performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate
Data Source
AI summary
A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.