Semiconductor Valve Manifold for Backflow Isolation and Burst Purging
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Solution Overview
Problem
Current semiconductor processing tools face challenges with backflow of process gases into purge gas manifolds, leading to unwanted deposition, damage, and dilution of process chemistry, as well as increased processing time and contamination risks due to large dead leg volumes in purge gas manifolds without local flow control.
Innovation Solution
A valve manifold with integrated control of purge and process gas flows, featuring multiple ports and valves that allow for fluidic separation and precise control, preventing backflow and enabling burst purges, thereby reducing dead leg volumes and improving processing conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If purge gas manifolds are used without local flow control, then gas distribution is simplified, but backflow of process gases occurs causing unwanted deposition and damage
Solution Approach 1:
The manifold system is segmented into separate purge gas and process gas flow paths with distinct control mechanisms. The purge gas manifold is divided into multiple zones with individual flow control, preventing process gas backflow into purge lines while maintaining simplified overall gas distribution architecture.
Solution Approach 2:
Check valves are introduced as intermediary components between the process gas and purge gas manifolds. These passive flow control elements act as mediators that automatically prevent backflow of process gases into the purge gas manifold without requiring complex active control systems.
2Volume of stationary object
If large dead leg volumes are present in purge gas manifolds, then gas storage capacity increases, but processing time increases and contamination risks increase
Solution Approach 1:
The purge gas manifold incorporates dynamic flow control capabilities with locally positioned valves that can rapidly adjust or close flow paths. This dynamic control allows the system to quickly purge accumulated gases from the manifold volume, reducing effective dead leg impact on processing time while maintaining the volume benefits for gas storage and pressure stabilization.
Solution Approach 2:
The system performs preliminary purging actions by positioning purge gas flow paths to clear process gases from the manifold before main processing begins. This preliminary action reduces contamination risks and prepares the system for efficient processing without requiring excessively large manifold volumes.
3Quantity of substance
If process gases flow into purge gas manifolds, then gas mixing occurs, but process chemistry is diluted and uniformity decreases
Solution Approach 1:
The design extracts and separates the purge gas flow path from the process gas flow path, preventing process gases from entering the purge gas manifold. This extraction eliminates unwanted gas mixing and maintains process chemistry purity, ensuring uniform deposition and etching across the substrate surface.
Solution Approach 2:
Different regions of the gas distribution system are assigned different functional qualities: the process gas manifold maintains high purity for precise chemistry control, while the purge gas manifold handles removal functions. This local quality differentiation prevents contamination and maintains manufacturing precision through targeted flow control strategies.
Data Source
AI summary
A valve manifold for use in a semiconductor processing tool comprises a manifold body, a purge gas inlet, a process gas inlet, a manifold outlet, a divert outlet, a first valve interface, a second valve interface, and a third valve interface. The first valve interface and the third valve interface each includes a first port, and a second port. The second valve interface includes a first port, a second port, a third port, and a fourth port.