Direct Liquid Injection of Vanadium Precursors

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Solution Overview

Problem

Existing vapor deposition systems face challenges in providing high vapor flux of metal precursors like vanadium halides while minimizing decomposition, which affects the stability and efficiency of forming metal nitride layers on substrates.

Innovation Solution

A direct liquid injection system that includes a precursor source, a control valve, an injector, and a reaction chamber, where the vanadium precursor is maintained in liquid form at controlled temperatures and vaporized immediately before delivery to the chamber, using an atomizer and a heating element to prevent thermal decomposition.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If metal precursors are heated to provide high vapor flux, then vapor delivery rate is improved, but precursor decomposition increases

Engineering Contradiction:
Improvevapor fluxVSAvoidprecursor stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The system performs preliminary atomization of the liquid precursor into fine droplets before heating, creating a large surface area that enables rapid vaporization at lower temperatures. This preliminary preparation allows the precursor to achieve high vapor flux without requiring excessive heating that would cause decomposition

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system exploits the phase transition from liquid to vapor through controlled atomization and heating. By transitioning the precursor through the liquid-droplet-vapor phases efficiently, the system achieves high vapor flux while minimizing the time and temperature exposure that would lead to decomposition

Inventive Principle:
Principle #36Phase transitions

2Use of energy by moving object

If precursor is heated for extended periods, then vaporization is improved, but thermal decomposition increases

Engineering Contradiction:
Improvevaporization efficiencyVSAvoidthermal decomposition
Core Design Contradiction:
Use of energy by moving objectVSObject-generated harmful factors

Solution Approach 1:

The system rushes through the vaporization process by atomizing the precursor and exposing it to heat only for the brief moment needed for phase transition. The fine droplets vaporize rapidly in a short residence time, skipping the prolonged heating period that would cause thermal decomposition

Inventive Principle:
Principle #21Skipping (Rushing through)

Solution Approach 2:

The system changes the physical parameters of the precursor by atomizing it into fine droplets with large surface area-to-volume ratio. This parameter change enables efficient heat transfer and rapid vaporization at lower temperatures and shorter times, improving vaporization efficiency while avoiding thermal decomposition

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures high vapor flow rates with reduced precursor decomposition, improving process stability and consistency in forming vanadium nitride layers on substrates.

Implementation Method 1

atomizing the liquid vanadium halide precursor with the carrier gas to form a spray

Methodology Applied
Scientific EffectAtomization:

Implementation Method 2

heating the spray to vaporize the vanadium halide precursor

Methodology Applied
Scientific EffectVaporization: Evaporation

Implementation Method 3

heating the spray to vaporize the vanadium halide precursor

Methodology Applied
Scientific EffectHeating: Heating

Implementation Method 4

a carrier gas in fluid communication with the atomizer

Methodology Applied
Scientific EffectFluid transport:

Data Source

PatentUS20210371978A1System and methods for direct liquid injection of vanadium precursors
Publication Date: 2021.12.02 ASM IP HLDG BV
  • US20210371978A1 patent drawing
  • US20210371978A1 patent drawing
  • US20210371978A1 patent drawing

AI summary

Direct liquid injection systems and vapor deposition systems including direct liquid injection systems are disclosed. Exemplary direct liquid injection systems and related vapor deposition systems can be configured for forming vanadium containing layer on a substrate by cyclical deposition processes.