Vanadium Layer Deposition with Halide Precursors for Low-Resistivity Films
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Solution Overview
Problem
The formation of vanadium containing films is challenging due to the need for plasma-based approaches or unusual process conditions in thermal methods, limiting efficient deposition methods for semiconductor applications.
Innovation Solution
A cyclic deposition process using a vanadium halide precursor and an organoindium reducing agent to form vanadium containing layers, such as vanadium nitride or chalcogenides, with low electrical resistivity, suitable for semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If plasma-based approaches are used to deposit vanadium containing films, then film formation is achieved, but process complexity and equipment requirements increase
Solution Approach 1:
The patent replaces plasma-based deposition mechanisms with a thermal vapor deposition process using a vanadium halide precursor and hydrogen-containing atmosphere. This substitution eliminates the need for complex plasma generation equipment and control systems while achieving effective vanadium film deposition through simplified thermal and chemical processes.
Solution Approach 2:
The invention changes the deposition parameters by using a vanadium halide precursor that decomposes at lower temperatures in a hydrogen-containing atmosphere, compared to traditional plasma methods. This parameter change allows film formation without requiring high-power plasma sources or complex plasma chemistry control, thereby reducing process complexity.
2Device complexity
If thermal deposition methods are used with standard conditions, then process simplicity increases, but film formation fails for electropositive metals like vanadium
Solution Approach 1:
The patent modifies thermal deposition parameters by introducing a hydrogen-containing atmosphere and using a vanadium halide precursor instead of elemental vanadium. These parameter changes enable successful film formation through enhanced reduction chemistry, while maintaining the simplicity of thermal processing without requiring plasma or other complex mechanisms.
Solution Approach 2:
The invention introduces a hydrogen-containing atmosphere as an intermediary medium that facilitates the decomposition and reduction of the vanadium halide precursor. This intermediary enables effective film formation under simple thermal conditions by providing the necessary chemical environment for reduction, without adding significant process complexity.
3Stability of the object's composition
If conventional deposition methods are used, then existing processes can be maintained, but deposition efficiency and film quality are insufficient for next generation semiconductor devices
Solution Approach 1:
The patent improves deposition efficiency and film quality by changing the precursor chemistry to vanadium halide compounds and using hydrogen-containing atmospheres. These parameter changes enable lower temperature deposition, better film uniformity, and higher deposition rates, meeting the demands of next generation semiconductor devices while maintaining process reliability through well-controlled chemical vapor deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of vanadium containing layers with low resistivity, suitable for semiconductor applications, including gate metals, contact materials, and interconnects, overcoming the limitations of existing deposition methods.
Implementation Method 1
A cyclic deposition process using a vanadium halide precursor and an organoindium reducing agent to form vanadium containing layers
Implementation Method 2
A cyclic deposition process using a vanadium halide precursor and an organoindium reducing agent to form vanadium containing layers
Data Source
AI summary
The present disclosure generally relates to structures comprising one or more vanadium containing layers and to methods and systems for forming said structures. In some embodiments, the structures comprise a first vanadium containing layer that is formed using a cyclic deposition process. The cyclic deposition process comprises providing a substrate in a reaction space, contacting a surface of the substrate with a vanadium precursor, and contacting the surface of the substrate with a reducing agent to form the first vanadium containing layer on the surface of the substrate. In some embodiments, a second vanadium containing layer is formed on or over the first vanadium containing layer and/or from the first vanadium containing layer.