Vanadium Oxide Gap Fill at Low Temperature for Seam-Free Trenches
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Solution Overview
Problem
Conventional deposition processes face challenges in void-free filling of high aspect ratio gaps or trenches in semiconductor substrates due to limitations in material flowability and conformality, leading to seam formation and uneven layers.
Innovation Solution
A vapor deposition process using alternating pulses of vapor-phase vanadium precursor and oxygen reactant, with purging steps to remove excess reactants and byproducts, is employed to form vanadium oxide layers, optimizing susceptor temperature and purge times for improved gap fill properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional thin film growth methods are used, then deposition is achieved, but seam formation and uneven layers occur due to limited material flowability
Solution Approach 1:
The patent changes the physical state parameter of the deposition material from solid to liquid-like, enabling flowable deposition that can conform to high aspect ratio features without forming seams or voids. This parameter change transforms the deposition mechanism to achieve seamless gap fill while maintaining uniformity.
Solution Approach 2:
The invention utilizes phase transition by depositing material in a liquid-like state that flows to fill gaps, then transitions to a solid state upon completion. This phase transition enables the material to achieve conformal coverage and seamless filling of high aspect ratio structures that cannot be achieved with traditional solid-phase deposition methods.
2Object-generated harmful factors
If material flowability is increased to achieve seam-free filling, then conformality improves, but uneven layers and poor conformality result
Solution Approach 1:
The patent employs periodic pulsed deposition cycles where material is deposited in controlled increments. This periodic action allows the liquid-like material to flow and conform to the substrate geometry in a controlled manner, achieving both seam-free filling and uniform layer thickness by repeating the deposit-flow cycle multiple times.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves seamless, conformal vanadium oxide deposition with reduced voids and seams, enhancing gap fill capabilities and promoting bottom-up growth, particularly in high aspect ratio features.
Implementation Method 1
The pulse of vapor-phase vanadium precursor forms a layer of vanadium species on the substrate surface
Implementation Method 2
The subsequent pulse of vapor-phase oxygen reactant reacts with the vanadium species on the substrate surface to form vanadium oxide
Data Source
AI summary
Vapor deposition methods and related systems are provided for depositing layers comprising vanadium and oxygen. In some embodiments, the methods comprise contacting a substrate in a reaction space with alternating pulses of a vapor-phase vanadium precursor and a vapor-phase oxygen reactant. The reaction space may be purged, for example, with an inert gas, between reactant pulses. The methods may be used to fill a gap on a substrate surface. Reaction conditions, including deposition temperature and reactant pulse and purge times may be selected to achieve advantageous gap fill properties. In some embodiments, the substrate on which deposition takes place is maintained at a relatively low temperature, for example between about 50° C. and about 185° C.