Oxygen-Rich Vanadium Oxide Sensor for Selective Light Detection
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Solution Overview
Problem
Existing electromagnetic sensors face challenges in selectively sensing visible light and ultraviolet rays while avoiding harmful near-infrared radiation, and they struggle with manufacturing costs and sensitivity, as well as requiring continuous movement for motion-sensing applications and are expensive for high-temperature measurements.
Innovation Solution
The development of an electromagnetic sensor system comprising a silicon doped with an n-type dopant as the first substance layer and an oxygen-rich vanadium oxide as the second substance layer, with specific dopant concentrations and band gap values, allowing for selective absorption in the visible and ultraviolet regions and improved sensitivity, along with a Wheatstone bridge circuit and analog-digital converter for signal processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a silicon-based electromagnetic sensor is used, then it has high absorption characteristics for near-infrared light, but it requires additional filters that increase manufacturing costs and reduce detection sensitivity
Solution Approach 1:
The patent changes the material parameter from conventional silicon to vanadium oxide with specific oxygen content (VxOy where 2 < y/x ≤ 2.5). This material substitution fundamentally alters the absorption characteristics to selectively detect visible and ultraviolet light while inherently blocking near-infrared radiation, eliminating the need for additional filter components and reducing manufacturing complexity
Solution Approach 2:
The sensor employs a composite structure combining vanadium oxide semiconductor layer with specific oxygen stoichiometry. This composite material approach achieves multi-functional performance: selective wavelength absorption in visible and UV regions combined with inherent near-infrared rejection, replacing the need for separate silicon sensor and filter components
2Object-affected harmful factors
If a filter is added to remove near-infrared wavelength region, then harmful infrared sensing is eliminated, but manufacturing costs increase and detection sensitivity decreases
Solution Approach 1:
The patent converts the potentially harmful near-infrared absorption capability into a beneficial selective rejection feature. By using vanadium oxide with controlled oxygen content, the material naturally absorbs harmful near-infrared radiation while maintaining high sensitivity to visible and ultraviolet light, transforming what would be a harmful interference into a protective filtering effect without additional components
3Ease of operation
If motion-sensing sensor based on pyroelectric material is used, then person's motion can be sensed, but the person must continue to move for continuous recognition
Solution Approach 1:
The patent enables continuous sensing action by detecting infrared radiation directly from the human body without requiring movement. The vanadium oxide sensor continuously monitors thermal radiation emitted by the body, maintaining detection capability whether the subject is stationary or moving, thus providing uninterrupted sensing coverage
4Temperature
If thermistors are used for measuring high temperatures above 150°C, then high-temperature measurement is achieved, but manufacturing becomes difficult and costs increase
Solution Approach 1:
The patent employs thin-film vanadium oxide material that can be deposited using conventional semiconductor fabrication techniques such as sputtering or chemical vapor deposition. This thin-film approach enables cost-effective manufacturing of high-temperature sensors using standard industrial processes, replacing expensive and difficult-to-manufacture thick-film thermistor materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sensor system achieves enhanced sensitivity and selectivity for visible and ultraviolet light, reduces manufacturing costs, and enables continuous motionless infrared sensing and high-temperature measurements, improving detection capabilities and operational convenience.
Implementation Method 1
the second substance layer has the highest absorption coefficient for the electromagnetic wave of the first wavelength
Implementation Method 2
the first substance layer containing silicon doped with an n-type dopant
Data Source
AI summary
Electromagnetic sensor of an oxygen-rich vanadium oxide and the system thereof are provided. The electromagnetic sensor of an oxygen-rich vanadium oxide according the embodiment of the present invention comprises; the first substance layer containing silicon doped with an n-type dopant; and the second substance layer arranged on the first substance layer, and containing a vanadium oxide represented by the molecular formula of VxOy. Dopant concentration of the first substance layer can be higher than 1.0×10′5 cm−3 and lower than 1.0×1019 cm−3, while the ratio of y to x in the molecular formula can be larger than 2 and smaller than 2.5.