Vanadium Oxide Layer Deposition for Void-Free Trench Filling
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Solution Overview
Problem
Conventional deposition processes face challenges in filling high aspect ratio features, such as trenches, in semiconductor devices with vanadium oxide-containing materials that can withstand chemical mechanical polishing and etching processes.
Innovation Solution
A method involving cyclical deposition of vanadium precursors and oxygen reactants, with controlled purging, is used to selectively deposit vanadium oxide on the distal surfaces of gaps, ensuring void-free filling and adequate step coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used to fill high aspect ratio trenches, then the filling process is simple, but the filling is incomplete with voids and poor step coverage
Solution Approach 1:
The patent employs periodic action through cyclical deposition sequences where precursor and reactant pulses are alternated in repeated cycles. Each cycle consists of introducing a vanadium precursor pulse, purging, introducing an oxygen reactant pulse, and purging again. This periodic cycling enables progressive filling of high aspect ratio trenches with complete step coverage and void-free material deposition, resolving the contradiction between filling completeness and process simplicity.
2Reliability
If vanadium oxide is deposited to fill high aspect ratio features, then the material provides adequate withstand for CMP and etching, but conventional processes produce voids and carbon impurities
Solution Approach 1:
The patent applies parameter changes by precisely controlling deposition cycle parameters including precursor pulse duration (0.1-1.0 s), reactant pulse duration (0.1-1.0 s), purge times (1-50 s), and chamber pressure (0.1-10 Torr). These parameter optimizations ensure complete reaction of vanadium precursor with oxygen reactant, eliminating carbon impurities while maintaining the vanadium oxide material's withstand capability for subsequent CMP and etching processes.
3Manufacturing precision
If cyclical deposition with multiple purges is used, then void-free filling is achieved, but the process time increases
Solution Approach 1:
The patent ensures continuity of useful action by maintaining the substrate in the reaction chamber throughout the entire cyclical deposition process without removal. The sequential pulses of precursor and reactant continuously deposit vanadium oxide material on the substrate surface and within trenches. This continuous in-chamber processing achieves void-free filling while minimizing time loss compared to processes requiring substrate removal and repositioning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves efficient filling of high aspect ratio features with vanadium oxide, providing seamless growth and high step coverage, suitable for subsequent processing steps without voids or carbon impurities.
Implementation Method 1
A method for filling a gap is provided. The method comprises introducing a substrate provided with a gap into a reactor chamber... executing a plurality of deposition cycles... A deposition cycle comprises a precursor pulse and a reactant pulse... The precursor pulse comprises introducing a vanadium precursor into the reactor chamber... The reactant pulse comprises introducing an oxygen reactant into the reactor chamber... Thus, a vanadium oxide containing material is selectively deposited on the distal surface
Data Source
AI summary
Disclosed are methods and systems for depositing layers comprising vanadium and oxygen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.