Vanadium Silicon Carbonitride Coating for Uniform Hard Film Deposition
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Solution Overview
Problem
Conventional vanadium carbonitride films have limitations in hardness improvement and require specialized film formation apparatus for complex shapes, leading to increased costs and uneven deposition.
Innovation Solution
A vanadium silicon carbonitride film is developed using the plasma chemical vapor deposition method, with specific composition ratios and gas sources to enhance hardness and deposition uniformity, allowing for formation on complex shapes without the need for specialized apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the ion plating method is used to form a vanadium carbonitride film, then the film can be formed on the base material, but the deposition uniformity is poor and specialized apparatus is required for complex shapes
Solution Approach 1:
The patent changes the deposition method from ion plating to plasma CVD, and modifies the film composition parameters by adding silicon element and controlling the V/(V+Si) ratio between 0.30-0.70 and Si/(V+Si+C+N) ratio between 0.10-0.40. This parameter change enables uniform deposition on complex shapes using standard apparatus without requiring specialized equipment
Solution Approach 2:
The patent creates a composite vanadium silicon carbonitride film by combining vanadium, silicon, carbon, and nitrogen elements. The addition of silicon element forms a composite structure that improves both deposition uniformity and film properties, allowing standard plasma CVD apparatus to achieve consistent results on complex-shaped workpieces
2Strength
If the hardness of the vanadium carbonitride film is increased to improve abrasion resistance, then the abrasion resistance improves, but there is a limit to further hardness improvement
Solution Approach 1:
The patent develops a composite vanadium silicon carbonitride film by adding silicon element to the traditional vanadium carbonitride system. The silicon element forms Si-C-N bonds that create a harder composite structure, achieving Vickers hardness of 2800-3500 HV, which exceeds the hardness limit of conventional vanadium carbonitride films
Solution Approach 2:
The patent changes the compositional parameters by controlling the vanadium content (a) between 0.30-0.70 and silicon content (b) between 0.10-0.40, with a/b ratio between 0.50-2.00. This parameter optimization enables the film to achieve superior hardness while maintaining manufacturability through standard plasma CVD processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The vanadium silicon carbonitride film achieves higher hardness and heat resistance than conventional vanadium carbonitride films, with improved deposition uniformity and reduced costs due to the use of a standard plasma CVD method, suitable for complex shapes.
Implementation Method 1
a film formation method excellent in deposition uniformity, the plasma chemical vapor deposition method is known
Data Source
AI summary
A vanadium silicon carbonitride film includes vanadium, silicon, carbon, and nitrogen, wherein when vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as a, and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as b, 0.30≤a/b≤1.3 and 0.30≤a+b≤0.70 are satisfied, and a total of the vanadium element concentration, the silicon element concentration, the carbon element concentration, and the nitrogen element concentration in the film is 90 [at %] or more.