Vapor Chamber Package Structure for IC Hotspot Heat Dissipation
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Solution Overview
Problem
The challenge of efficiently dissipating heat in semiconductor package structures with localized high temperature regions, which can lead to reduced reliability and performance due to burn out failure, delamination, and timing uncertainty, is not adequately addressed by existing technologies.
Innovation Solution
Incorporating a heat dissipation structure with vapor chambers and a capping structure having high thermal conductivity, along with a vaporizable working fluid, to enhance vertical heat dissipation from IC chips, mitigating localized high temperature regions and improving thermal diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple IC chips are integrated into a single multi-chip package to increase device density and reduce form factor, then performance increases and power consumption decreases, but localized high temperature regions occur leading to burn out failure, delamination, and timing uncertainty
Solution Approach 1:
The heat dissipation structure is segmented into multiple functional layers: a support structure with vapor chambers positioned over specific IC chips, a capping structure with high thermal conductivity material, and a thermal interface structure. This segmentation allows targeted heat management for different high-power-density regions while maintaining overall package reliability.
Solution Approach 2:
Vapor chambers are introduced as intermediary heat transfer components between the IC chips and the capping structure. These vapor chambers contain vaporizable working fluid that mediates heat transfer through phase change, effectively bridging the thermal gap and preventing localized overheating that causes reliability issues.
2Ease of manufacture
If conventional packaging structures are used without specialized heat dissipation components, then device integration is simpler and manufacturing is easier, but heat dissipation efficiency is insufficient leading to localized high temperature regions
Solution Approach 1:
The thermal conductivity parameter of the capping structure is significantly increased by using high thermal conductivity materials. Additionally, the phase change parameter of the vaporizable working fluid in the vapor chambers is utilized to enhance heat transfer efficiency, transforming the thermal management approach from simple conduction to phase-change-based heat dissipation.
Solution Approach 2:
The heat dissipation structure employs composite material architecture combining the support structure (potentially lower thermal conductivity material), vapor chambers (containing vaporizable working fluid), thermal interface structure, and capping structure (high thermal conductivity material). This composite approach optimizes both manufacturability and thermal performance by assigning different material properties to different functional layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively dissipates heat away from IC chips, reducing the risk of burn out failure and timing uncertainty, thereby increasing the performance and reliability of semiconductor package structures.
Implementation Method 1
one or more vapor chambers embedded in the support structure and over at least a portion of the first IC chip
Implementation Method 2
a capping structure on the support structure, wherein the capping structure has a higher thermal conductivity than the support structure
Data Source
AI summary
Various embodiments of the present disclosure are directed towards a semiconductor package structure including a support structure having a first surface opposite a second surface. A first integrated circuit (IC) chip is on the first surface of the support structure. A capping structure is on the second surface of the support structure. A vapor chamber is disposed in the support structure and overlies at least a portion of the first IC chip.