Vapor Chamber Power Module Cooling for Semiconductor Chips

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Solution Overview

Problem

Conventional heat dissipation methods for power modules in electrified vehicles are limited in their ability to efficiently eliminate heat generated by semiconductor chips, which is necessary for stable operation.

Innovation Solution

A power module design incorporating vapor chambers with a fluid flow, where the vapor chambers have a shape that expands the heat transfer range, connecting semiconductor chips and substrates, and includes a double-sided cooling method with substrates on both sides of the chips, enhancing thermal conductivity and cooling efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional cooling channels are used to dissipate heat from semiconductor chips, then the power module can operate with basic cooling, but the heat dissipation efficiency is limited and thermal conductivity is insufficient

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidcooling structure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent employs vapor chambers that utilize phase transition of working fluid (evaporation and condensation) to transfer heat from the semiconductor chip to the substrate. The vapor chamber converts thermal energy into phase change cycles, achieving high-efficiency heat dissipation without requiring complex external cooling systems.

Inventive Principle:
Principle #36Phase transitions

Solution Approach 2:

The vapor chamber acts as an intermediary heat transfer device between the semiconductor chip and the substrate. It mediates the heat transfer process by containing working fluid that undergoes phase change, effectively bridging the thermal gap and improving overall heat dissipation efficiency.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If the vapor chamber plane area is increased to expand heat transfer range, then thermal conductivity improves, but the device occupies more space

Engineering Contradiction:
Improvethermal conductivityVSAvoidvapor chamber area
Core Design Contradiction:
TemperatureVSArea of stationary object

Solution Approach 1:

The vapor chamber is strategically positioned and sized to cover only the necessary heat-generating regions of the semiconductor chip. The plane area of the vapor chamber is optimized to match the active heat transfer zones, providing localized high-efficiency cooling without unnecessarily increasing overall device area.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent utilizes the vertical dimension by placing the vapor chamber between the semiconductor chip and substrate, allowing heat transfer in the thickness direction. This dimensional approach enables effective heat dissipation without proportionally increasing the planar area of the device.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The expanded heat transfer range improves thermal conductivity and cooling efficiency, allowing the power module to operate stably at lower temperatures.

Implementation Method 1

at least one vapor chamber having a fluid flowing therein and disposed between the semiconductor chip and one of the at least one substrate

Methodology Applied
Scientific EffectPhase change: Phase Change

Implementation Method 2

each of the at least one vapor chamber includes: a first side thereof including a plane area greater than or equal to a plane area of the semiconductor chip and connected to the metal circuit of the one of the at least one substrate

Methodology Applied
Scientific EffectHeat pipe: Heat Pipe

Data Source

PatentUS12582008B2Power module
Publication Date: 2026.03.17 HYUNDAI MOTOR CO LTD
  • US12582008B2 patent drawing
  • US12582008B2 patent drawing

AI summary

A power module include at least one substrate including an insulating layer and a metal circuit disposed on a first side of the insulating layer, a semiconductor chip, and at least one vapor chamber including a fluid flowing therein and disposed between the semiconductor chip and one of the at least one substrate, wherein each of the at least one vapor chamber includes a first side thereof including a plane area greater than or equal to a plane area of the semiconductor chip and connected to the metal circuit of the one of the at least one substrate, and a second side thereof facing the first side along a first direction and connected to the semiconductor chip.