Vapor Deposition System with Remote RF Heating for Low-Temperature Film Formation
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Solution Overview
Problem
Current vapor deposition techniques for thin film formation in semiconductor manufacturing face challenges in achieving efficient film deposition over complex topographies and require high temperatures, which can lead to inefficiencies and limitations in material properties.
Innovation Solution
A vapor deposition system utilizing a pyrolytic CVD process with a resistive heating element to thermally fragment film-forming compositions, combined with a remote source for reactive interactions, allowing for lower temperature deposition and improved film formation on substrates with complex geometries.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high temperature vapor deposition is used, then film deposition efficiency is improved, but material properties deteriorate due to thermal damage
Solution Approach 1:
The heating function is segmented from the substrate holder to a remote radio frequency (RF) coil, allowing independent control of film deposition conditions and substrate temperature. The RF coil generates electromagnetic fields that heat the precursor vapor without directly heating the substrate, thus achieving efficient deposition while maintaining low substrate temperature.
Solution Approach 2:
Electromagnetic fields serve as an intermediary between the energy source and the precursor vapor. The RF coil generates electromagnetic fields that selectively heat the precursor molecules in the vapor phase, enabling thermal decomposition and film formation without direct thermal contact with the substrate, thereby avoiding thermal damage to temperature-sensitive materials.
2Manufacturing precision
If conventional CVD is used, then film formation is achieved, but conformal deposition over complex topography is limited
Solution Approach 1:
The conventional mechanical heating system is replaced with an electromagnetic field-based heating system. The RF coil generates electromagnetic fields that penetrate and heat the precursor vapor uniformly across the entire substrate surface, including complex three-dimensional topographies, enabling conformal film deposition that follows the substrate geometry without relying on thermal conduction from contact points.
3Temperature
If plasma enhanced CVD is used, then deposition temperature is reduced, but process complexity increases
Solution Approach 1:
The plasma generation function is extracted from the deposition process. Instead of using plasma to activate the precursor and enable low-temperature deposition, the invention uses direct RF heating of the precursor vapor, eliminating the need for plasma generation equipment and associated complexity while achieving similar low-temperature deposition results.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient thin film deposition at lower temperatures, enhancing material properties and process efficiency by fragmenting film precursors and introducing reactive species to promote polymerization and film formation on substrates with complex topographies.
Implementation Method 1
a resistive heating element disposed on an interior surface of the gas distribution system or embedded within the gas distribution system... configured to receive a flow of a film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated
Implementation Method 2
resistive heating element... configured to receive a flow of a film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated
Implementation Method 3
a vacuum pumping system configured to evacuate the process chamber
Implementation Method 4
a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate
Implementation Method 5
the precursor vapor is chemisorbed on the surface of the substrate while it thermally decomposes and reacts
Implementation Method 6
In a PECVD process, the CVD process further includes plasma that is utilized to alter or enhance the film deposition mechanism
Data Source
AI summary
A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone. The deposition system further includes a remote source coupled to the process chamber and configured to supply a reactive composition to the process chamber to chemically interact with the substrate, wherein the remote source comprises a remote plasma generator, a remote radical generator, a remote ozone generator, or a water vapor generator, or a combination of two or more thereof.