Vapor Oxide Etching With Cyclic Chemistry for Uniform Semiconductor Surfaces
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Solution Overview
Problem
Conventional etching methods for semiconductor substrates face challenges such as high processing costs, low throughput, and non-uniform etching due to sensitivity to oxide density variations, particularly when using multiple reaction chambers or continuous etching processes.
Innovation Solution
A method utilizing a single reaction chamber with a cyclic etching process involving an ammonium-based hydroxide source and a fluorine source, allowing for higher temperature flexibility and uniform etching across substrates with varying oxide densities, combined with a continuous etching process for homogeneous regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching methods are used with multiple reaction chambers or continuous etching processes, then etching can be performed on substrate surfaces, but processing times are long, capital costs are high, and etching uniformity is poor due to sensitivity to oxide density variations
Solution Approach 1:
The patent changes the chemical parameters of the etching process by using a cyclic combination of ammonium-based hydroxide source and fluorine source, which enables uniform etching across different oxide densities while maintaining fast processing speeds. This chemical parameter change allows the process to achieve both high uniformity and fast throughput that were previously contradictory
Solution Approach 2:
The patent implements periodic action through cyclic etching processes that alternate between different chemical environments (ammonium-based hydroxide source and fluorine source). This periodic cycling enables the system to achieve uniform etching results while maintaining fast processing times, resolving the contradiction between etching uniformity and processing speed
2Manufacturing precision
If conventional etching methods are used with multiple reaction chambers, then etching can be performed on substrate surfaces, but capital costs and device complexity are high
Solution Approach 1:
The patent merges multiple reaction chamber functions into a single reaction chamber by implementing cyclic processes that sequentially introduce different chemical sources. This consolidation maintains the ability to achieve uniform etching results while significantly reducing device complexity and capital costs associated with multiple chambers
Solution Approach 2:
The single reaction chamber is designed to perform multiple functions through the cyclic introduction of different chemical sources (ammonium-based hydroxide source and fluorine source). This multi-functional approach enables the single chamber to achieve etching uniformity previously requiring multiple specialized chambers, thereby reducing device complexity
3Productivity
If conventional etching methods are used, then etching can be performed on substrate surfaces, but etching rates vary due to sensitivity to oxide density variations
Solution Approach 1:
The patent changes the chemical parameters by using a cyclic combination of ammonium-based hydroxide source and fluorine source, which enables the etching process to maintain consistent rates across different oxide densities. This parameter change allows simultaneous achievement of high productivity and uniformity that were previously contradictory
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves faster processing times, reduced capital costs, and highly uniform etching results by minimizing temperature differentials and adapting to varying oxide densities, ensuring consistent etch rates across substrate surfaces.
Implementation Method 1
exposing the substrate to a reactant gas to etch the oxide material on the substrate, where the reactant gas is in a vapor phase and comprises an ammonium-based hydroxide source
Implementation Method 2
exposing the substrate to a second temperature to remove the salt from the substrate, where the second temperature is higher than the first temperature
Implementation Method 3
the reactant gas is generated, at least in part, by vaporizing a solution comprising the ammonium-based hydroxide source and a solvent
Data Source
AI summary
Embodiments herein relate to methods and apparatus for etching a substrate. In particular, the substrate is a semiconductor substrate and the material being etched is an oxide material such as silicon oxide. In various embodiments, the method may include receiving a substrate having an oxide material thereon; and exposing the substrate to a reactant gas to etch the oxide material on the substrate, where the reactant gas is in a vapor phase and comprises an ammonium-based hydroxide source.