Vapor-Phase SAM Deposition for Low Vapor Pressure Molecules
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Solution Overview
Problem
Current apparatuses for depositing self-assembled monolayers (SAMs) suffer from slow deposition rates and insufficient deposition amounts, leading to decreased throughput and challenges in selectively depositing subsequent materials on previously deposited layers in semiconductor manufacturing.
Innovation Solution
A processing chamber and system are designed to deposit SAMs using a vapor-based approach with direct line-of-sight thermal evaporation, allowing for improved delivery and control of low vapor pressure organic molecules, thereby enhancing deposition quality and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional SAM deposition apparatuses are used, then SAM deposition is achieved, but deposition rate is slow and deposition amount is insufficient
Solution Approach 1:
The patent changes the physical state parameters of the organic molecule source from solid/liquid to vapor phase, and adjusts pressure and temperature parameters to optimize deposition rate. The vapor-based approach with controlled pressure (10^-6 to 10^-3 Torr) and temperature enables significantly faster deposition rates compared to conventional liquid-phase or solid-source methods.
Solution Approach 2:
The patent utilizes phase transition of organic molecules from solid/liquid to vapor phase through thermal evaporation. The organic molecules are heated to vaporize and then deposit onto the substrate, forming SAMs. This phase transition approach enables controlled deposition with improved rate and quantity.
2Productivity
If conventional SAM deposition methods are used, then SAM formation is achieved, but throughput is decreased
Solution Approach 1:
By changing to vapor-phase deposition with optimized pressure and temperature parameters, the deposition time is reduced while maintaining or improving SAM quality. The vapor-based approach allows for faster deposition rates, directly improving throughput and reducing the time loss associated with conventional slow deposition methods.
3Stability of the object's composition
If low vapor pressure organic molecules are used, then material stability is improved, but deposition delivery is challenging
Solution Approach 1:
The patent uses thermal evaporation to transition low vapor pressure organic molecules from solid/liquid phase to vapor phase, enabling their delivery to the substrate. The controlled heating and vacuum environment facilitate the phase transition and vapor transport of these stable but low-volatility molecules.
Solution Approach 2:
The patent employs a vacuum environment (inert atmosphere) to facilitate the vapor-based deposition of low vapor pressure organic molecules. The vacuum conditions prevent contamination and enable efficient vapor transport from the source to the substrate, overcoming the delivery challenges of low-volatility materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The vapor-based approach significantly improves the quality and quantity of SAM deposition, increasing throughput and enabling more precise selective deposition of subsequent materials, which is critical for next-generation semiconductor devices.
Implementation Method 1
at least one evaporator mounted on the lid plate; depositing, in the first processing chamber, the low vapor pressure OM onto at least a first portion of the substrate
Implementation Method 2
The first heater is configured to provide temperature control during self-assembled monolayer (SAM) deposition
Implementation Method 3
The second heater is configured to provide temperature control during SAM annealing; annealing, in the first processing chamber, the SAM on at least the first portion of the substrate at a second temperature
Data Source
AI summary
A method includes flowing an evaporated low vapor pressure organic molecule (OM) into a processing chamber including a substrate. The method further includes depositing, in the processing chamber, the low vapor pressure OM onto at least a portion of the substrate at a first temperature and a first pressure to form a self-assembled monolayer (SAM) on at least the portion of the substrate. The method further includes annealing, in the processing chamber, the SAM on at least the portion of the substrate at a second temperature and a second pressure. The second pressure is greater than the first pressure and the second temperature is greater than the first temperature.