Vaporization Adjusting Plate for Uniform DCR Vaporization

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Solution Overview

Problem

In multi-tray vaporization devices used for semiconductor manufacturing, there is a tendency for dodecacarbonyl triruthenium (DCR) to vaporize unevenly, leading to reduced surface area exposure to the carrier gas, decreased partial pressure, and subsequently lower formation efficiency of the ruthenium barrier layer.

Innovation Solution

A vaporization amount adjusting plate with varying aperture ratios per unit area is used to cover the solid raw material, ensuring uniform vaporization from the outer circumferential side to the exhaust passage side, preventing bias and maintaining the surface area exposed to the carrier gas, thereby stabilizing the partial pressure of DCR in the carrier gas.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a multi-tray vaporization device is used for thermal decomposition of DCR, then the ruthenium barrier layer can be formed on the wafer, but the DCR vaporizes unevenly causing reduced surface area exposure and decreased partial pressure

Engineering Contradiction:

Improveuniformity of DCR vaporizationVSAvoidformation efficiency of ruthenium barrier layer

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The vaporization amount adjusting plate is divided into multiple regions with different aperture ratios to create local quality variations. The aperture ratio is set to be smaller in regions where DCR vaporizes more actively and larger in regions where vaporization is slower, thereby achieving uniform vaporization across the entire DCR surface by compensating for local differences in vaporization rates.

Inventive Principle:

Principle #3Local quality

2Quantity of substance

If the carrier gas flows from the outer peripheral side toward the exhaust passage, then the vaporized DCR is entrained and transported, but the surface area of DCR exposed to carrier gas decreases over time

Engineering Contradiction:

Improveamount of vaporized DCRVSAvoidsurface area of DCR exposed to carrier gas

Core Design Contradiction:

Quantity of substanceVSArea of stationary object

Solution Approach 1:

The vaporization amount adjusting plate is placed on the DCR surface before the vaporization process begins and is maintained throughout the process. This preliminary placement ensures that the carrier gas flows uniformly across the entire DCR surface from the beginning, preventing the formation of dead zones and ensuring consistent exposure of the DCR surface to the carrier gas throughout the vaporization process.

Inventive Principle:

Principle #10Preliminary action

3Device complexity

If the aperture ratio is uniform across the vaporization amount adjusting plate, then the structure is simple, but the vaporization becomes biased toward the exhaust passage side

Engineering Contradiction:

Improvestructure of vaporization amount adjusting plateVSAvoiduniformity of vaporization distribution

Core Design Contradiction:

Device complexityVSStability of the object's composition

Solution Approach 1:

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach prevents the decrease in vaporized DCR entrained by the carrier gas, maintaining the partial pressure and enhancing the formation efficiency of the ruthenium barrier layer during the semiconductor manufacturing process.

Implementation Method 1

the carrier gas is vaporized from the solid raw material and carries a predetermined raw material that has passed through the plurality of through holes

Methodology Applied

Scientific EffectVaporization: Evaporation

Implementation Method 2

the carrier gas entrains the vaporized DCR, passes through the exhaust passage, and flows into the processing container

Methodology Applied

Scientific EffectEntrainment: Entrainment

Implementation Method 3

a barrier layer made of Ru is produced by thermally decomposing a solid raw material containing Ru, such as dodecacarbonyl triruthenium (DCR)

Methodology Applied

Scientific EffectThermal decomposition: Pyrolysis

Implementation Method 4

in a thermal chemical vapor deposition (TCVD), a barrier layer made of Ru is produced by thermally decomposing a solid raw material containing Ru

Methodology Applied

Scientific EffectThermal chemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS20240124971A1Vaporization device, semiconductor manufacturing system, and method for vaporizing solid raw material

Publication Date: 2024.04.18 TOKYO ELECTRON LTD

AI summary

A vaporization device includes a vaporization amount adjusting plate that covers a surface of a solid raw material, and an exhaust passage that exhausts a carrier gas that flows while being faced with the vaporization amount adjusting plate. The vaporization amount adjusting plate has a plurality of through holes. An aperture ratio per unit area in the adjusting plate varies along a flowing direction of the carrier gas. The carrier gas is vaporized from the solid raw material and carries a predetermined raw material that has passed through the plurality of through holes.