Vaporizer Cleaning During Dielectric Deposition
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Solution Overview
Problem
In atomic layer deposition for semiconductor devices, precursors with large molecular weights and solid state at room temperature pose challenges in forming high-k dielectric layers, leading to nozzle blocking and operational issues in vaporizers due to decomposition and residue formation.
Innovation Solution
An in-situ method for cleaning the vaporizer during dielectric layer deposition, involving the use of organic solvents and pressurized gases like nitrogen, argon, or helium to prevent nozzle blocking, where the vaporizer is cleaned after the first source gas supply and before re-supplying it, synchronously with purging or source gas introduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If precursors with large molecular weights and solid state at room temperature are used to form high-k dielectric layers, then the dielectric constant is improved, but nozzle blocking and operational capability deterioration occur in the vaporizer
Solution Approach 1:
The vaporizer is cleaned in advance during idle time between deposition processes using organic solvents and pressurized gases to remove residues before they cause blocking, ensuring continuous reliable operation while maintaining the ability to deposit high-k dielectric layers
Solution Approach 2:
Organic solvents and pressurized gases are introduced as intermediary substances to clean the vaporizer interior and nozzle, removing decomposed precursor residues without damaging the vaporizer structure or affecting the subsequent deposition of high-k dielectric layers
2Manufacturing precision
If precursors are vaporized in the vaporizer to deposit high-k dielectric layers, then thin film deposition is achieved, but decomposed residues form and block the nozzle
Solution Approach 1:
The decomposed residues that would normally block the nozzle are converted into removable deposits on the vaporizer interior, which are then cleaned away using organic solvents and pressurized gases during idle time, transforming a harmful blocking issue into a manageable cleaning process
Solution Approach 2:
Residues and decomposed materials are extracted from the vaporizer interior and nozzle using organic solvents and pressurized gases, removing the harmful substances that would otherwise block the nozzle and interfere with subsequent deposition processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents nozzle blocking and maintains the operational capability of the atomic layer deposition apparatus, enabling the deposition of high-k dielectric layers for semiconductor memory devices without deteriorating the vaporizer's performance.
Implementation Method 1
a process of cleaning an inside of the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again
Implementation Method 2
using one selected from a group of pressurized gases consisting of nitrogen, argon and helium
Data Source
AI summary
Provided is an in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, to prevent nozzle blocking in the vaporizer and an atomic layer deposition apparatus. During the dielectric layer deposition process, the following steps are repeated: supplying a first source gas for dielectric layer deposition into a chamber of an atomic layer deposition apparatus; purging the first source gas; supplying a second source gas into the chamber of the atomic layer deposition apparatus; purging the second source gas, the in-situ method of cleaning the vaporizer is performed after supplying the first source gas for dielectric layer deposition and before supplying the first source gas again.