Variable Capacitance Devices With Integrated Gate-Adjusted Resistors

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Solution Overview

Problem

Conventional varactors in integrated circuits have low quality factors (Q-factors), especially when implemented using advanced processing technologies, which limits their performance in applications like wireless transmitters and receivers.

Innovation Solution

The integration of a variable resistor in combination with a capacitor to form a variable capacitance device, where the resistance of the resistor is adjusted by a gate structure over a doped well in a semiconductor substrate, enhancing the Q-factors and allowing for higher capacitance adjustment while occupying a small footprint.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If conventional varactors are implemented using advanced processing technologies, then device integration and miniaturization are improved, but quality factors (Q-factors) deteriorate

Engineering Contradiction:
Improvedevice footprintVSAvoidquality factor
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The varactor device is divided into multiple fingers (e.g., five fingers) that are arranged in an interdigitated pattern. Each finger consists of alternating conductive plates separated by dielectric material. This segmentation allows the total capacitance to be distributed across multiple smaller capacitive elements, reducing parasitic effects while maintaining the required capacitance value in a compact footprint.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from a planar capacitor design to a three-dimensional interdigitated structure where conductive plates extend vertically and horizontally in alternating patterns. This multi-dimensional arrangement increases the effective capacitance per unit area by utilizing vertical stacking and horizontal interdigitating simultaneously, achieving high capacitance in a small footprint without degrading Q-factor.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If capacitance adjustment range is increased in conventional varactors, then tuning flexibility is improved, but quality factor deteriorates

Engineering Contradiction:
Improvecapacitance adjustment rangeVSAvoidquality factor
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent implements a dynamically adjustable varactor structure where the effective capacitance can be tuned by changing the bias voltage applied to the conductive plates. The interdigitated finger configuration allows continuous adjustment of capacitance over a wide range (e.g., 0.5 pF to 5 pF) while maintaining high Q-factor because the dynamic tuning mechanism does not introduce additional loss paths that would degrade quality factor.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in higher Q-factors and more efficient capacitance adjustment compared to conventional varactors, enabling improved performance in integrated circuits with a compact design.

Implementation Method 1

The resistance of the variable resistor is based on a voltage applied to a gate structure over a channel region defined in a doped well formed in a semiconductor substrate that adjusts a resistance of the channel

Methodology Applied
Scientific EffectField effect transistor resistance modulation: Conduction (electrical)

Data Source

PatentUS9312221B2Variable capacitance devices
Publication Date: 2016.04.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9312221B2 patent drawing
  • US9312221B2 patent drawing
  • US9312221B2 patent drawing

AI summary

A variable capacitance device includes a capacitor having a first capacitance and a variable resistor coupled in series with the capacitor. The variable resistor includes a gate structure formed over a channel region defined in a doped well formed in a semiconductor substrate. A resistance of the variable resistor is based on a voltage applied to the gate structure, which adjusts a resistance of the channel and a capacitance of the variable capacitance device.