Variable Channel Strain Nanowire Transistors
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Solution Overview
Problem
Current semiconductor devices face limitations in scaling and increasing drive current due to constraints in channel strain engineering, which affects carrier velocity and overall performance.
Innovation Solution
The implementation of nanowire semiconductor devices with variable channel strain, achieved through strain engineering by applying different stress levels to channel regions using stress metal films or stress capping layers, enhances carrier velocity and drive current without increasing power consumption or supply voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional semiconductor devices are scaled to increase density, then device density improves, but drive current capability deteriorates
Solution Approach 1:
The patent applies different strain levels to different regions of the nanowire channel by using multiple stressor elements with varying stress magnitudes. Specifically, first stressor elements apply a first strain level to a first region of the channel, while second stressor elements apply a second strain level to a second region of the channel. This local differentiation of strain quality enables optimized carrier velocity in different channel segments, resolving the contradiction between high density and sufficient drive current.
2Power
If channel strain is increased to improve carrier velocity, then drive current improves, but device complexity increases
Solution Approach 1:
The patent segments the channel strain engineering into discrete regions by placing first stressor elements in a first region and second stressor elements in a second region. Each stressor element applies a specific strain level to its designated region. This segmentation approach simplifies the overall strain engineering complexity by breaking down the continuous channel into manageable zones with optimized strain characteristics, rather than applying uniform or continuously varying strain throughout.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively increases carrier velocity and drive current by modulating the channel electric field, improving semiconductor device performance while maintaining operational efficiency.
Implementation Method 1
strain engineering by applying different stress levels to channel regions using stress metal films or stress capping layers
Data Source
AI summary
A semiconductor device includes a nanowire structure and a stressor. The nanowire structure includes a first channel section and a second channel section. The stressor subjects the first channel section to a first strain level and the second channel section to a second strain level greater than the first strain level. The difference between the second strain level and the first strain level is less than the second strain level.