Variable Energy Ion Implantation for Uniform CMP
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Solution Overview
Problem
Advanced integrated circuit manufacturing faces challenges in achieving uniform material removal during Chemical Mechanical Planarization (CMP) processes, where coating layers often exhibit non-uniform thickness due to convex surfaces, necessitating a solution to control ion implantation energy for tailored material removal rates.
Innovation Solution
An ion implantation system with a scanning apparatus and energy filter allows for continuous variation of ion beam energy, enabling selective and variable depth implantation across the workpiece surface, thereby tailoring the material removal rate to achieve uniform thickness and topography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional ion implantation systems use fixed energy ion beams, then the ion implantation process is simple and uniform, but the material removal rate cannot be tailored to achieve uniform thickness on convex surfaces
Solution Approach 1:
The system dynamically varies the ion beam energy during the implantation process by adjusting the voltage on the electrode stage. This allows the implantation energy to change continuously as the workpiece moves through the beam, enabling tailored material removal rates across different regions of the workpiece surface to achieve uniform thickness
Solution Approach 2:
The system changes the energy parameter of the ion beam by varying the electrode stage voltage. This parameter change enables control over the implantation depth and material removal rate, allowing the process to adapt to different surface topographies and achieve uniform coating thickness
2Manufacturing precision
If the ion beam energy is varied to achieve tailored material removal, then uniform thickness can be achieved on convex surfaces, but the system complexity increases due to additional voltage control requirements
Solution Approach 1:
The electrode stage serves multiple functions: it accelerates the ion beam to the workpiece and simultaneously varies the ion beam energy by applying different voltages. This multi-functionality reduces the need for separate energy control components, thereby limiting the increase in system complexity while achieving the desired uniformity
3Productivity
If fixed ion implantation energy is used, then the process is simple and fast, but non-uniform material removal occurs on convex surfaces resulting in non-uniform thickness
Solution Approach 1:
The system maintains high productivity by continuously varying the electrode stage voltage during the implantation process. This dynamic adjustment allows tailored material removal across different surface regions without requiring multiple discrete implantation steps, thus preserving process speed while achieving uniform thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system ensures uniform thickness and topography post-CMP by varying ion implantation depths and energies, addressing the non-uniformity issues in CMP processes and enabling precise material control for advanced integrated circuit manufacturing.
Implementation Method 1
an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam
Implementation Method 2
The generated ions are formed into a high speed ion beam utilizing a strong electric field to draw ions from the ion source and direct the ions along a predetermined beam path
Implementation Method 3
an electrode stage positioned downstream of the mass analyzer for accelerating or decelerating the ion beam in response the bias voltages applied thereto
Implementation Method 4
an energy filter provided for deflecting the ion beam wherein an output deflection angle can be maintained by selectively varying bias voltages applied to the energy filter in accordance the energy of the ion beam
Implementation Method 5
A scanning apparatus is provided and configured to scan one or more of the ion beam and/or workpiece support with respect to one another
Data Source
AI summary
An ion implantation system and method for implanting ions at varying energies across a workpiece is provided. The system comprises an ion source configured to ionize a dopant gas into a plurality of ions and to form an ion beam. A mass analyzer is positioned downstream of the ion source and configured to mass analyze the ion beam. A deceleration/acceleration stage is positioned downstream of the mass analyzer. An energy filter may form part of the deceleration/acceleration stage or may positioned downstream of the deceleration/acceleration stage. An end station is provided having a workpiece support associated therewith for positioning the workpiece before the ion beam is also provided. A scanning apparatus is configured to scan one or more of the ion beam and workpiece support with respect to one another. One or more power sources are operably coupled to one or more of the ion source, mass analyzer, deceleration/acceleration stage, and energy filter. A controller is configured to selectively vary one or more voltages respectively supplied to one or more of the deceleration/acceleration stage and the energy filter concurrent with the scanning of the ion beam and/or workpiece support, wherein the selective variation of the one or more voltages is based, at least in part, on a position of the ion beam with respect to the workpiece support.