Variable Gap Partition for Gas Separation in Substrate Processing

Solution Overview

Problem

Existing substrate processing apparatuses face challenges in maintaining the separation and uniform distribution of processing gases, leading to potential gas mixing and particle generation during film deposition on wafers, which affects the uniformity and quality of the deposited films.

Innovation Solution

The apparatus incorporates a partition with a narrower gap in the separation region between the source gas and reaction gas supply regions, along with covering members and gap adjusting members, to create distinct gas flow paths and prevent gas mixing, ensuring that the source gas and reaction gas remain separated on both the upper and lower surfaces of the rotary table.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a partition with uniform gap is used between the rotary table and heater, then the structure is simple and easy to manufacture, but processing gases mix in the separation region affecting film uniformity

Engineering Contradiction:

Improvefilm uniformityVSAvoidpartition structure

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The partition structure implements local quality by having different gap widths in different regions: the first and second processing regions have a first gap width to allow adequate gas supply, while the separation region has a second gap width (narrower than the first) to prevent gas mixing. This localized differentiation of gap dimensions optimizes both gas distribution and separation functionality without requiring complete structural redesign.

Inventive Principle:

Principle #3Local quality

2Quantity of substance

If the gap between partition and rotary table is wide, then gas supply is adequate, but gases from different processing regions mix together

Engineering Contradiction:

Improvegas supply quantityVSAvoidgas separation

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

The partition structure implements local quality by having different gap widths in different regions: the first and second processing regions have a first gap width to allow adequate gas supply, while the separation region has a second gap width (narrower than the first) to prevent gas mixing. This localized differentiation of gap dimensions optimizes both gas distribution and separation functionality without requiring complete structural redesign.

Inventive Principle:

Principle #3Local quality

3Manufacturing precision

If the gap between partition and rotary table is narrow, then gas separation is improved, but gas supply quantity is reduced

Engineering Contradiction:

Improvegas separationVSAvoidgas supply quantity

Core Design Contradiction:

Manufacturing precisionVSQuantity of substance

Solution Approach 1:

The partition structure implements local quality by having different gap widths in different regions: the first and second processing regions have a first gap width to allow adequate gas supply, while the separation region has a second gap width (narrower than the first) to prevent gas mixing. This localized differentiation of gap dimensions optimizes both gas distribution and separation functionality without requiring complete structural redesign.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses gas mixing and particle generation, maintaining the separation of source and reaction gases, thereby enhancing the uniformity and quality of film deposition on the substrates.

Implementation Method 1

The partition is provided such that the gap in at least a part of the separation region is narrower than the gap in the first processing region and the second processing region

Methodology Applied

Scientific EffectGas flow separation:

Implementation Method 2

a heater provided below the rotary table

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

a substrate processing apparatus for depositing various kinds of films on a wafer by rotating a rotary table on which a plurality of wafers are placed

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS20230062671A1Substrate processing apparatus

Publication Date: 2023.03.02 TOKYO ELECTRON LTD

AI summary

A substrate processing apparatus includes a processing chamber; a rotary table that is rotatably provided in the processing chamber; a heater provided below the rotary table; a partition, provided between the rotary table and the heater with a gap with respect to a lower surface of the rotary table, configured to partition the processing chamber into a first region in which the rotary table is provided and a second region in which the heater is provided; a first processing region in which a first processing gas is supplied to an upper surface of the rotary table; a second processing region in which a second processing gas is supplied to the upper surface of the rotary table; and a separation region in which a separation gas for separating the first and second processing gas is supplied to the upper surface of the rotary table.