Variable Gap Substrate Processing for Film Step Coverage
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Solution Overview
Problem
Existing substrate processing methods face challenges in achieving optimal step coverage of films on patterns during semiconductor device manufacturing, particularly in recessed areas, due to limitations in gas distribution and film formation techniques.
Innovation Solution
A substrate processing method involving a substrate processing apparatus with adjustable gap settings between the substrate and partition plates, alternating gas supply ports, and specific gas flow control to optimize film formation, allowing for improved step coverage by varying the distance and gas type to enhance film distribution and thickness uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single gap distance is maintained between substrate and partition plate during film formation, then the process is simple and stable, but the step coverage on patterns with recesses is insufficient
Solution Approach 1:
The patent applies the dynamics principle by making the gap distance between the substrate and partition plate variable rather than fixed. The gap is dynamically adjusted between a first gap distance (larger) and a second gap distance (smaller) during different stages of the film formation process. This dynamic adjustment enables improved step coverage in recessed areas while maintaining process controllability.
Solution Approach 2:
The patent implements periodic action by alternating between two distinct gap distance settings during the film formation process. The gap is periodically switched between the first gap distance and the second gap distance, creating a cyclic pattern of distance variation that enhances film deposition in recessed regions while maintaining overall process stability.
2Manufacturing precision
If the gap distance between substrate and partition plate is reduced to improve gas distribution, then film uniformity improves, but gas flow control becomes more difficult and deposition on upper areas increases excessively
Solution Approach 1:
The patent uses dynamic adjustment of the gap distance to balance gas distribution and film uniformity. By switching between a larger first gap distance and a smaller second gap distance at appropriate stages, the system achieves improved gas flow control and film uniformity without the difficulties associated with maintaining a consistently small gap throughout the entire process.
3Manufacturing precision
If partition plates are positioned close to substrates to control gas flow, then film formation is improved, but access and maintenance of the substrate retainer becomes difficult
Solution Approach 1:
The patent resolves the maintenance accessibility issue by dynamically adjusting the gap distance. During operation, the gap can be reduced to the second (smaller) distance for improved film formation, but during maintenance and access operations, the gap can be increased to the first (larger) distance, allowing easy access to the substrate retainer and partition plates without permanent spatial constraints.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the step coverage and thickness uniformity of films on substrates, particularly in trench structures, by controlling gas flow and distribution, thereby enhancing the manufacturing efficiency and quality of semiconductor devices.
Implementation Method 1
supplying a first gas to the substrate through a gas supply port... supplying a second gas to the substrate through the gas supply port... form NH terminations... form N terminations
Data Source
AI summary
According to one aspect of the technique of the present disclosure, there is provided a substrate processing method including: accommodating a substrate retainer in a process chamber, including: a substrate support; and a partition plate support capable of supporting an upper partition plate provided above a substrate supported by the substrate support; setting a distance between the substrate and the upper partition plate to a first gap; supplying a first gas to the substrate through a gas supply port in a state where the distance between the substrate and the upper partition plate is maintained at the first gap; setting the distance between the substrate and the upper partition plate to a second gap; and supplying a second gas to the substrate through the gas supply port in a state where the distance between the substrate and the upper partition plate is maintained at the second gap.