Variable Height Conductive Bumps for BOT Reliability

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Solution Overview

Problem

The mismatch in thermal expansion coefficients between semiconductor chips and package substrates in Bump-on-Trace (BOT) structures leads to stress and peeling off of metal traces, especially with finer bump pitches, resulting in cold joints and reduced bonding force.

Innovation Solution

The semiconductor structure incorporates conductive bumps with adjustable heights over conductive traces on the substrate, where the height of the bumps is proportional to the minimum distance between the conductive pads and traces, ensuring secure electrical and mechanical connections without cold joints, using a design that varies bump heights between core and periphery regions based on substrate and chip alignment.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of moving object

If BOT structures are used to increase integration density, then chip area requirement is reduced, but metal traces peel off from package substrate due to CTE mismatch stress

Engineering Contradiction:
Improvechip area requirementVSAvoidbonding integrity
Core Design Contradiction:
Area of moving objectVSReliability

Solution Approach 1:

The patent applies local quality by varying the height of conductive bumps based on their location. Bumps in the core region have different heights than bumps in the periphery region, allowing each region to be optimized for its specific stress conditions and functional requirements, thereby maintaining bonding integrity while achieving fine pitch integration

Inventive Principle:
Principle #3Local quality

2Productivity

If finer bump pitches are used to increase integration density, then more components are integrated, but bonding force between conductive traces and package substrate decreases causing peeling

Engineering Contradiction:
Improveintegration densityVSAvoidbonding force
Core Design Contradiction:
ProductivityVSStrength

Solution Approach 1:

The patent changes the parameter of bump height to optimize bonding strength at fine pitches. By adjusting the height parameter of conductive bumps based on regional requirements, the invention maintains adequate bonding force between conductive traces and package substrate even when bump pitches are reduced to increase integration density

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If uniform bump heights are used in BOT structures, then manufacturing is simplified, but cold joints occur due to substrate and chip alignment issues

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidelectrical connection reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent implements local quality by dividing the semiconductor chip into core and periphery regions with different bump height characteristics. This regional differentiation ensures that each bump achieves proper contact with its corresponding conductive trace despite variations in substrate and chip alignment, preventing cold joints while maintaining manufacturing feasibility

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10163844B2Semiconductor device having conductive bumps of varying heights
Publication Date: 2018.12.25 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10163844B2 patent drawing
  • US10163844B2 patent drawing
  • US10163844B2 patent drawing

AI summary

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate including a plurality of conductive traces and a recess filled with a conductive material electrically coupled to at least one of the plurality of conductive traces. The semiconductor structure also includes semiconductor chip. The semiconductor chip includes a plurality of conductive pads correspondingly electrically connected with the plurality of conductive traces through a plurality of conductive bumps. A height of each of the plurality of conductive bumps is determined by a minimum distance between the plurality of conductive pads and the corresponding conductive traces thereof.