Variable-Height Interconnect Lines and Vias for Local RC Tuning
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Solution Overview
Problem
Semiconductor devices face challenges in optimizing the resistance and capacitance values of interconnect lines and vias, which affect the performance of connected devices, as existing technologies do not effectively allow for layout-dependent optimization of these parameters.
Innovation Solution
The semiconductor device incorporates interconnect wiring with varying heights for metal conductive lines and vias, allowing for optimized resistance and capacitance values by varying the height of the lines and vias, with differences in height exceeding fabrication variances, to align with the optimal constraints of connected devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If uniform height interconnect lines and vias are used, then fabrication process is simple, but resistance and capacitance values cannot be optimized for different connected devices
Solution Approach 1:
The patent applies local quality by varying the height of interconnect lines and vias at different locations to match the specific RC optimization needs of connected devices. Different portions of the semiconductor device have different interconnect heights tailored to local requirements, transforming a uniform structure into a spatially differentiated one that optimizes performance for diverse device connections.
Solution Approach 2:
The patent implements dynamics by making interconnect line and via heights adjustable and variable rather than fixed and uniform. The structure allows for dynamic adaptation of geometric parameters (heights) to achieve optimal RC characteristics for different device configurations and performance requirements.
2Reliability
If variable height interconnect lines and vias are used, then resistance and capacitance values can be optimized, but fabrication process becomes more complex
Solution Approach 1:
The patent applies segmentation by dividing the interconnect structure into multiple height levels and regions. The fabrication process is segmented into stages that create different height portions separately, allowing each segment to be optimized independently while maintaining overall device reliability and performance.
3Adaptability or versatility
If height differences exceed fabrication variances, then optimal RC constraints can be achieved, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies parameter changes by systematically varying the height parameter of interconnect lines and vias across different regions. This controlled parameter variation enables tuning of RC properties to achieve optimal performance while managing manufacturing precision requirements through deliberate design of height differences that exceed typical fabrication variances.
Data Source
AI summary
One or more systems, devices, and/or methods of use provided herein relate to a semiconductor device with lines and vias having variable heights. A semiconductor device can include a substrate and a first level of interconnect wiring including a plurality of metal conductive lines electrically coupled to the substrate. The semiconductor device can include a first portion of the plurality of metal conductive lines including a first height; and a second portion of the plurality of metal conductive lines including a second height. The second height can be greater than the first height. The first height and the second height can be different by an amount larger than a fabrication variance for the semiconductor device. The second height can be different from the first height by at least about 25%.