Variable Impedance Memory Cell Time-to-Transition Read Circuit

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current memory devices struggle to efficiently determine data values stored in memory cells with variable impedance, which affects the accuracy and speed of data retrieval.

Innovation Solution

The development of memory devices that incorporate a read circuit capable of performing a time delay determination of a voltage change on a signal node to accurately read data values stored in memory cells with variable impedance, allowing for precise measurement of time-to-transition measurements to discern data values.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional reading methods are used for memory cells with variable impedance, then the reading process becomes inaccurate, but the patent introduces time delay determination to improve accuracy

Engineering Contradiction:
Improvedata retrieval accuracyVSAvoidreading mechanism complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent replaces conventional voltage-based reading methods with a time-based measurement system. A read circuit applies a read voltage to the memory cell and measures the time delay until a threshold voltage is reached, substituting traditional electrical measurement with temporal measurement to accurately read variable impedance memory cells

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the measurement parameter from voltage level to time delay. By measuring how long it takes for the memory cell voltage to transition from an initial state to a threshold state under a applied read voltage, the system converts impedance variations into measurable time differences, improving reading accuracy

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If time delay determination is implemented to read variable impedance memory cells, then data retrieval accuracy improves, but the reading process takes more time

Engineering Contradiction:
Improvedata value determination accuracyVSAvoiddata retrieval time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The read circuit performs preliminary actions by pre-charging or pre-discharging the memory cell to a known initial voltage state before applying the read voltage. This preliminary preparation ensures that the time delay measurement starts from a consistent baseline, enabling accurate and repeatable measurements without excessive time penalty

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The reading process uses periodic voltage application and measurement cycles. The read voltage is applied in controlled periods, and the time delay is measured within each period, allowing for efficient batch processing of multiple memory cells while maintaining measurement precision

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables accurate and efficient data retrieval by effectively utilizing time-to-transition measurements to determine data values in memory cells with variable impedance, enhancing the performance and reliability of memory devices.

Implementation Method 1

each memory cell having a variable impedance that varies in accordance with a respective data value stored therein

Methodology Applied
Scientific EffectVariable impedance: Electrical Resistance

Implementation Method 2

a read circuit configured to read the data value stored within a selected memory cell based upon a variable time delay determination of a signal node voltage change

Methodology Applied
Scientific EffectTime delay determination: Time of Flight

Data Source

PatentUS12112794B2Memory device having variable impedance memory cells and time-to-transition sensing of data stored therein
Publication Date: 2024.10.08 R&D 3 LLC
  • US12112794B2 patent drawing
  • US12112794B2 patent drawing
  • US12112794B2 patent drawing

AI summary

The present disclosure relates to circuits, systems, and methods of operation for a memory device. In an example, a memory device includes a plurality of memory cells, each memory cell having a variable impedance that varies in accordance with a respective data value stored therein; and a read circuit configured to read the data value stored within a selected memory cell based upon a variable time delay determination of a signal node voltage change corresponding to the variable impedance of the selected memory cell.