Variable Inductance Gain Control in Cascoded HF Amplifiers

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Solution Overview

Problem

Existing high-frequency amplifier circuits face challenges in controlling gain without negatively impacting low-frequency operation, and fixed inductances are sensitive to process, voltage, and temperature variations.

Innovation Solution

Implementing a variable inductance system in cascoded differential amplifier topologies, allowing post-fabrication gain control by switching between transistors with different inductance values, maintaining optimal current density and reducing capacitive load.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If fixed inductance is used in high-frequency amplifier circuits, then gain control is simplified, but the circuit becomes sensitive to process, voltage, and temperature variations

Engineering Contradiction:
Improvegain control complexityVSAvoidsensitivity to PVT variations
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent implements variable inductance through switching between multiple inductor configurations (series, parallel, single) based on operating conditions. This dynamic adjustment allows the circuit to adapt to process, voltage, and temperature variations, resolving the contradiction between simplified gain control and reliability under PVT variations.

Inventive Principle:
Principle #15Dynamics

2Adaptability or versatility

If variable inductance system is implemented for high-frequency gain control, then flexible gain control is achieved, but device complexity increases

Engineering Contradiction:
Improvegain control flexibilityVSAvoidinductance switching structure
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent divides the inductance control into discrete segments or configurations (first inductor configuration, second inductor configuration, third inductor configuration). Each configuration provides a specific inductance value suitable for different gain requirements. This segmentation enables flexible gain control while managing device complexity through modular design.

Inventive Principle:
Principle #1Segmentation

3Reliability

If traditional amplifier topologies are used, then low-frequency operation is maintained, but high-frequency gain control is limited

Engineering Contradiction:
Improvelow-frequency performanceVSAvoidhigh-frequency gain control capability
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent designs the amplifier circuit to serve multiple frequency ranges and gain requirements using a unified topology with switchable inductor configurations. The same amplifier structure maintains low-frequency performance while enabling high-frequency gain control through the variable inductance mechanism, achieving multi-functionality without requiring separate circuits for different frequency ranges.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS20250293652A1Variable inductance systems and methods for high frequency gain control
Publication Date: 2025.09.18 MAXIM INTEGRATED PROD INC
  • US20250293652A1 patent drawing
  • US20250293652A1 patent drawing
  • US20250293652A1 patent drawing

AI summary

Various embodiments of the invention provide amplifier control systems and methods for adjusting a high frequency gain of an amplifier circuit. In certain embodiments, this is accomplished by varying an effective inductance of an amplifier circuit that comprises a first path, which comprises a first cascoded transistor in series with a first inductor and a second cascoded transistor in parallel with the first cascoded transistor. A second path to carry a second current in parallel with the first path comprises a third cascoded transistor that is coupled in series with a second inductor, wherein adjusting comprises maintaining the sum of the first and second currents to be substantively constant when alternating current between the second and third transistors.