Variable Inductor Gate Control for Semiconductor Switching Noise

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Solution Overview

Problem

Semiconductor switching devices face a trade-off between electromagnetic noise and thermal runaway issues, with conventional systems either failing to regulate electromagnetic noise or thermal problems effectively, leading to increased switching losses and potential device failure.

Innovation Solution

A feedback control circuit with a current-controlled variable inductor and differential module computes the instantaneous rate of change of gate current, generating a reference voltage to regulate the inductance value, thereby optimizing the gate current and balancing electromagnetic noise and thermal behavior.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If high rate of change of gate triggering currents is used for fast switching, then switching speed is improved, but electromagnetic noise increases

Engineering Contradiction:
Improveswitching speedVSAvoidelectromagnetic noise
Core Design Contradiction:
SpeedVSObject-generated harmful factors

Solution Approach 1:

The patent employs a current-controlled variable inductor where the inductance value dynamically changes during the switching process. The inductance is higher during current rise to limit di/dt and reduce EMI, then becomes lower during current fall to enable fast switching. This dynamic adjustment resolves the contradiction between fast switching speed and electromagnetic noise reduction.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the inductance parameter of the gate inductor during the switching operation. By varying the inductance value based on the switching phase (higher during turn-on, lower during turn-off), the system optimizes both switching speed and electromagnetic noise characteristics, addressing the technical contradiction effectively.

Inventive Principle:
Principle #35Parameter changes

2Object-generated harmful factors

If high turn ON and turn OFF times are used to reduce electromagnetic noise, then electromagnetic noise is reduced, but switching losses increase

Engineering Contradiction:
Improveelectromagnetic noiseVSAvoidswitching losses
Core Design Contradiction:
Object-generated harmful factorsVSLoss of energy

Solution Approach 1:

The variable inductor dynamically adjusts its inductance value during the switching cycle. During turn-on, higher inductance limits di/dt to reduce EMI, while during turn-off, lower inductance enables fast current interruption. This dynamic behavior reduces both electromagnetic noise and switching losses simultaneously by optimizing the switching waveform shape.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements periodic switching with optimized current waveforms using the variable inductor. The inductor creates a controlled rising edge and rapid falling edge in the gate current, allowing the device to spend minimal time in the high-loss transition region while maintaining EMI compliance, thus reducing overall switching losses.

Inventive Principle:
Principle #19Periodic action

3Device complexity

If fixed inductance value is used in gate current control, then circuit simplicity is maintained, but adaptability to different circuits is reduced

Engineering Contradiction:
Improvecircuit simplicityVSAvoidadaptability to different circuits
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The current-controlled variable inductor provides continuous adaptability to different circuit conditions without requiring manual redesign. The inductance value automatically adjusts based on the instantaneous gate current, making the circuit universally applicable to different semiconductor devices and operating conditions while maintaining relatively simple circuit topology.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The variable inductor is controlled by the gate current itself, creating a self-regulating system. The inductor automatically adapts its inductance value based on the operating conditions without external intervention, providing universal adaptability to different circuits while keeping the control mechanism simple and integrated.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces electromagnetic noise and thermal issues by dynamically adjusting the gate current, allowing the semiconductor switching device to operate at an optimal point, minimizing switching losses and preventing thermal runaway.

Implementation Method 1

an inductor is placed at input gate terminal of the semiconductor switching device. The inductor can be used to regulate gate current

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 2

a feedback control circuit. The feedback control circuit comprises a differential module to compute instantaneous rate of change of gate current with respect to time

Methodology Applied
Scientific EffectElectrical measurement:

Data Source

PatentUS10187051B2Circuit for controlling gate current of a semiconductor switching device
Publication Date: 2019.01.22 HITACHI LTD
  • US10187051B2 patent drawing
  • US10187051B2 patent drawing
  • US10187051B2 patent drawing

AI summary

The present disclosure discloses a circuit and a method for controlling gate current of a semiconductor switching device. The circuit comprises a current controlled variable inductor connected to a gate terminal of the semiconductor switching device and a feedback control circuit. The feedback control circuit comprises a differential module to compute an instantaneous rate of change of gate current with respect to time, a reference generator to generate a reference voltage and a control unit to regulate value of inductance of the variable inductor for controlling the gate current of the semiconductor switching device.