Variable Inductor Single-Mesh Loop for High-Frequency Q Factor
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Solution Overview
Problem
Existing inductor technologies face challenges in tuning range and Q factor performance, especially at high frequencies above 30 GHz, due to manufacturing variations and increased resistance in metal oxide semiconductor capacitors, which limits the effectiveness of frequency tuning and phase noise performance.
Innovation Solution
A parameter-variable device with a single-mesh structure using conducting wires and grounding properties to form loops that tune inductance, reducing parasitic capacitors and improving frequency characteristics and Q factor without drastic changes to the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If MOSCAP is used for frequency tuning in millimeter wave design above 30 GHz, then the oscillation frequency can be tuned, but the Q factor cannot be effectively increased due to large resistance in the lower metal layer
Solution Approach 1:
The patent moves the inductor from the lower metal layer to the upper metal layer, changing the vertical dimension of the circuit layout. This dimensional transition allows the inductor to operate in a layer with lower resistance, thereby improving the Q factor while maintaining frequency tuning capability through the integrated MOSCAP structure.
Solution Approach 2:
The patent combines the inductor and MOSCAP into a single integrated structure where the MOSCAP is formed within the inductor's metal layer. This merging allows simultaneous frequency tuning and maintains high Q factor by ensuring the capacitor operates in the low-resistance upper metal layer rather than the lower metal layer.
2Manufacturing precision
If the line width and metal layer thickness are decreased to accommodate 20 nm process variations, then the manufacturing precision is improved, but the resistance increases significantly
Solution Approach 1:
The patent relocates the inductor to the upper metal layer where the metal layer thickness is greater and resistance is lower. This vertical dimensionality change compensates for the increased resistance caused by reduced line width in the 20 nm process, maintaining low overall resistance while achieving precise line width control.
3Adaptability or versatility
If a switch is inserted between two inductors to serially connect them for tuning, then the equivalent inductance can be adjusted, but the resistance and inductance of the switch degrade the overall performance
Solution Approach 1:
The patent integrates the MOSCAP directly within the inductor structure, merging the tuning element with the inductor itself. This eliminates the need for external switches and separate inductors, thereby achieving inductance tuning while avoiding the performance degradation caused by switch resistance and parasitic inductance.
4Speed
If the capacitance is reduced to meet high frequency requirements above 30 GHz, then the oscillation frequency increases, but the effect of capacitance variation on tuning range decreases
Solution Approach 1:
The patent merges the MOSCAP with the inductor structure, allowing the capacitor to operate in the upper metal layer with lower resistance. This integration enables effective capacitance variation for frequency tuning even at high frequencies, as the low-resistance environment maintains the effectiveness of capacitance changes on the tuning range.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the tuning range and Q factor performance, reduces phase noise, and improves signal synchronous transfer by effectively utilizing the enclosed area and minimizing parasitic capacitors, allowing for precise inductance tuning and improved frequency characteristics.
Implementation Method 1
a first conducting wire electrically connected to the first conductor and a second conducting wire electrically connected to the first conducting wire and the first conductor, wherein the first conducting wire, the second conducting wire, and the first conductor are configured to form at least a main part of a loop to tune the electrical parameter
Data Source
AI summary
A device having a variable inductor includes an inductor having an inductance, a first conductor having a first grounding property, and a second conductor having a second grounding property. The device further includes a first single-mesh structure including a first grid. The first grid includes a first conducting wire electrically connected to the first conductor, and a second conducting wire electrically connected to the first conducting wire and the first conductor, wherein the first conducting wire, the second conducting wire and the first conductor are configured to form a first loop corresponding to the inductor for tuning the inductance. The first single-mesh structure further includes a second grid. The second grid includes a third conducting wire electrically connected to the first conducting wire and the second conductor, and a fourth conducting wire electrically connected to the third conducting wire and the second conductor, wherein the third conducting wire, the fourth conducting wire and the second conductor are configured to form a second loop corresponding to the inductor for tuning the inductance.