Variable Intensity Solid State Emitter for Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional microlithography systems, such as those using digital micromirror devices (DMDs), are limited in their ability to provide precise and cost-effective pattern creation on large area substrates due to binary emitter constraints, leading to inefficiencies in image quality and processing time.
Innovation Solution
An active matrix solid state emitter (SSE) system is introduced, featuring a substrate with a silicon layer and emitter substrate comprising arrays of transistors that can receive variable current, allowing for gray level control and eliminating the need for mechanical movement of emitters, thus reducing preparation time and improving throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional digital micromirror devices (DMD) are used to form light beams, then the system can create patterns on substrates, but the binary emitter constraint limits image quality precision
Solution Approach 1:
The patent transitions from binary emitters (DMD) to variable intensity solid state emitters (LEDs), changing the operational parameter from on/off states to continuously adjustable intensity levels. This allows precise control of light exposure intensity for each pixel, enabling gray scale imaging and significantly improving manufacturing precision for photolithography patterns.
Solution Approach 2:
The invention replaces the mechanical micromirror system of DMD with a solid state LED array. The mechanical movement of mirrors is substituted with electronic control of LED intensity through pulse width modulation (PWM), eliminating mechanical constraints and enabling smoother intensity variation for enhanced image quality.
2Productivity
If digital micromirror devices are used with binary emitters, then the system structure is simpler, but preparation time increases due to flip and settling times
Solution Approach 1:
The patent eliminates the mechanical micromirror flipping mechanism by using solid state LEDs with electronic intensity control. This substitution removes the flip time and settling time associated with mechanical movement, allowing immediate intensity changes and significantly reducing preparation time between exposure steps, thereby increasing processing throughput.
Solution Approach 2:
The invention employs pulse width modulation (PWM) to control LED intensity by varying the duty cycle of periodic pulses. This periodic action allows precise intensity control without mechanical movement, enabling rapid switching between intensity levels and reducing the time required for preparation between different exposure patterns.
3Manufacturing precision
If variable intensity diodes are implemented in an active matrix configuration, then gray level control is achieved, but device complexity increases
Solution Approach 1:
The patent divides the display into a matrix of independently controllable pixels, with each pixel containing multiple LEDs of different wavelengths (red, green, blue). This segmentation allows precise gray level control for each color channel independently, enabling full-color grayscale imaging while maintaining manageable complexity through modular pixel design.
Solution Approach 2:
The active matrix structure serves multiple functions: it provides individual pixel addressing, intensity control through PWM, and color mixing by combining multiple LED wavelengths. This multi-functionality consolidates what would otherwise require separate systems into a single integrated device, managing complexity while achieving precise gray level control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The active matrix SSE system enables improved lithographic control with per-pixel gray scale capability, enhancing image quality and processing efficiency by eliminating flip and settling times, and allowing for variable brightness per pixel, which addresses the limitations of binary emitters in conventional systems.
Implementation Method 1
a light-sensitive photoresist is typically applied to at least one surface of the substrate. Then, a pattern generator exposes selected areas of the light-sensitive photoresist as part of a pattern with light to cause chemical changes to the photoresist
Data Source
AI summary
Embodiments of the present disclosure generally relate to an image projection system. The image projection system includes an active matrix solid state emitter (SSE) device. The active matrix solid state emitter includes a substrate, a silicon layer, and a emitter substrate. The silicon layer is deposited over the substrate having a plurality of transistors formed therein. The emitter substrate is positioned between the silicon layer and the substrate. The emitter substrate comprises a plurality of emitter arrays. Each emitter array defines a pixel, wherein one pixel comprises one or more transistors from the plurality of transistors. Each transistor is configured to receive a variable amount of current.