Wavelength-Variable Laser Bandgap Layer for High-Power Single-Mode Output
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Solution Overview
Problem
Current semiconductor laser devices used in pumping lasers for optical communication systems face challenges in achieving high power output while maintaining low power consumption, as they tend to increase power consumption with higher driving current and voltage, leading to thermal saturation and difficulties in maintaining single transverse mode operation.
Innovation Solution
The introduction of an electric-field-distribution-control layer with band gap energy greater than the barrier layer, positioned between the separate confinement heterostructure layer and the n-type cladding layer, reduces optical electric field distribution to the p-type cladding layer, lowers inter valence band absorption, and increases external differential quantum efficiency, enabling high power output with reduced thermal resistance and electric resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If driving current and voltage are increased to achieve high power output, then power output is improved, but power consumption increases and thermal saturation occurs
Solution Approach 1:
The patent changes the band gap energy parameter of the semiconductor layer to be greater than that of the barrier layer, which fundamentally alters the energy band structure. This parameter change enables the electric field to be redistributed away from the p-type cladding layer, reducing inter valence band absorption and improving external differential quantum efficiency, thereby achieving high power output with reduced power consumption
Solution Approach 2:
The patent introduces a specific semiconductor layer with distinct local properties (band gap energy greater than barrier layer) positioned between the separate confinement heterostructure layer and n-type cladding layer. This local quality change creates a region that specifically controls electric field distribution, reducing it in the p-type cladding layer while maintaining or enhancing it in the active region, thus improving efficiency without sacrificing output power
2Power
If driving current is increased to achieve high power output, then power output is improved, but thermal saturation occurs
Solution Approach 1:
By changing the band gap energy parameter of the semiconductor layer to be greater than the barrier layer, the patent creates a more efficient carrier injection and recombination process. This reduces non-radiative recombination and associated heat generation, allowing high power output to be achieved without reaching thermal saturation
Solution Approach 2:
The patent converts the potential harm of high driving current (which causes thermal saturation) into a benefit by using it to enhance carrier injection efficiency through the modified band structure. The higher current drives more carriers into the active region where they recombine radiatively due to the improved quantum efficiency, converting what would be thermal loss into useful optical output
3Ease of manufacture
If structure is simplified to prevent mode transfer, then manufacturing efficiency is improved, but device performance may be compromised
Solution Approach 1:
The patent introduces a localized semiconductor layer with specific band gap properties that performs the dual function of controlling electric field distribution and maintaining single transverse mode operation. This localized intervention achieves the desired performance without requiring complex overall structural changes, thus maintaining manufacturing efficiency while ensuring reliability
Solution Approach 2:
The semiconductor layer acts as an intermediary between the separate confinement heterostructure layer and the n-type cladding layer. It mediates the electric field distribution and carrier transport, ensuring single transverse mode operation while maintaining a relatively simple overall structure that is amenable to efficient manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for high power output with low power consumption, maintaining single transverse mode operation and reducing thermal saturation, while also simplifying the structure to prevent mode transfer and enhancing manufacturing efficiency and cost-effectiveness.
Implementation Method 1
lowers inter valence band absorption
Implementation Method 2
a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction
Implementation Method 3
a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer
Data Source
AI summary
An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.