Variable Pitch Active Regions for Integrated Circuit Integration Density
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Solution Overview
Problem
Current integrated circuit devices face challenges in increasing integration density due to limitations in transistor design and layout, particularly with vertical field-effect transistors (VFETs), where the scalability and efficiency of active regions are hindered by fixed pitch structures.
Innovation Solution
The integration of standard cells with active regions having variable pitches and non-linear shapes, including a combination of linear and protruding portions, allows for increased integration density by optimizing the arrangement and spacing of active regions within the integrated circuit devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If fixed pitch structures are used in VFET devices, then manufacturing simplicity is maintained, but integration density increases are hindered
Solution Approach 1:
The patent divides the active regions into multiple pairs (first pair, second pair, third pair) with different pitch distances. Each pair is spaced differently in the first direction, creating segmented pitch variations that increase integration density while maintaining manageable manufacturing complexity through systematic segmentation.
Solution Approach 2:
Different regions of the device have different pitch characteristics. The first pair of active regions has a first pitch distance, while the second and third pairs have different pitch distances. This local variation in pitch quality allows optimization of integration density in specific areas without requiring complete redesign of the entire device structure.
2Quantity of substance
If active regions are spaced closer together, then integration density improves, but manufacturing precision requirements increase
Solution Approach 1:
By segmenting the pitch distances into discrete pairs (first pair with first distance, second and third pairs with second distance), the patent creates manageable manufacturing targets. Each segmented pitch region can be controlled independently, reducing the overall precision burden compared to a completely uniform fine-pitch structure.
Solution Approach 2:
The patent applies variable pitch only to specific pairs of active regions rather than uniformly across all regions. This partial application of pitch variation allows integration density improvement in critical areas while maintaining larger, easier-to-manufacture pitches in other areas, thus balancing density gains with manufacturing precision requirements.
Data Source
AI summary
Integrated circuit devices may include active regions spaced apart from each other in a direction. The active regions may include a first pair of active regions, a second pair of active regions, and a third pair of active regions. The first pair of active regions may be spaced apart from each other by a first distance in the direction, the second pair of active regions may be spaced apart from each other by the first distance in the direction, and the third pair of active regions may be spaced apart from each other by the first distance in the direction. The second pair of active regions may be spaced apart from the first pair of active regions and the third pair of active regions by a second distance in the direction, and the first distance may be shorter than the second distance.