Variable-Pitch Bond Structure for Flat Stacked IC Bonding

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Solution Overview

Problem

Existing stacked IC devices face issues with non-bond regions, increased design complexity, and fabrication costs due to uniform pitch conductive bond pads leading to height variations and reduced bonding adhesion between chips.

Innovation Solution

Implementing a bond structure with conductive bond pads arranged in different regions with varying pitches, where the first region has a higher density and smaller pitch directly under photodetectors, and the second region has a lower density and larger pitch, reducing the number of conductive structures and ensuring a flat bonding surface.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If uniform pitch conductive bond pads are used across the entire bond structure, then fabrication is simplified, but height variations occur leading to non-bond regions and reduced bonding adhesion

Engineering Contradiction:
Improvefabrication simplicityVSAvoidbonding adhesion
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The bond structure employs different pitch values in different regions: a first pitch in a first region and a second pitch in a second region. This local differentiation allows the bond pads to compensate for height variations caused by underlying interconnect structures, ensuring uniform bonding surfaces across the entire chip while maintaining fabrication simplicity through a systematic regional approach.

Inventive Principle:
Principle #3Local quality

2Device complexity

If uniform pitch conductive bond pads are used across the entire bond structure, then design is simplified, but non-bond regions increase reducing device yield

Engineering Contradiction:
Improvedesign complexityVSAvoiddevice yield
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent divides the bond structure into multiple regions with different pitch characteristics. The first region has a first pitch optimized for areas with certain height variations, while the second region has a second pitch optimized for areas with different height characteristics. This regional optimization eliminates non-bond regions and improves device yield without requiring overly complex design methodologies.

Inventive Principle:
Principle #3Local quality

3Productivity

If higher density bond pads with smaller pitch are used under photodetectors, then transmission efficiency improves, but the number of conductive structures increases raising fabrication costs

Engineering Contradiction:
Improvetransmission efficiencyVSAvoidnumber of conductive structures
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The bond structure implements a first pitch in a first region that is optimized for high transmission efficiency areas (such as under photodetectors), and a second pitch in a second region that reduces the overall number of conductive structures. This localized optimization ensures high performance where needed while reducing complexity and fabrication costs in other areas.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The bond structure is segmented into multiple regions with different pitch characteristics. This segmentation allows the design to optimize transmission efficiency in critical regions while reducing the number of conductive structures in non-critical regions, thereby balancing performance requirements with fabrication cost constraints.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20250246565A1Bond structure for stacked IC chips
Publication Date: 2025.07.31 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250246565A1 patent drawing
  • US20250246565A1 patent drawing
  • US20250246565A1 patent drawing

AI summary

Various embodiments of the present disclosure are directed towards a device including an interconnect structure over a substrate. A bond structure is over the interconnect structure. The bond structure includes a first plurality of conductive bond pads disposed in a first region and a second plurality of conductive bond pads disposed in a second region. The second region is adjacent to at least one side of the first region. A first pitch of the first plurality of conductive bond pads is less than a second pitch of the second plurality of conductive bond pads.