Variable Resistance Battery Barrier Layer Dendrite Control

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Solution Overview

Problem

Existing memory devices, such as PMC memory cells and neuromorphic systems, face issues with dendrite growth uncontrollability and reliability due to silver-based dendrite formation, leading to short circuits and reduced operational control, especially after numerous write/erase cycles, and traditional thin film batteries suffer from slow resistance changes due to electrochemical reactions.

Innovation Solution

A high-speed thin film two-terminal chargeable and dischargeable variable resistance battery with a layered structure comprising a cathode-side conductive layer, an electrolyte layer, a barrier layer, and an anode layer, where the barrier layer prevents ion reaction with the electrodes, allowing controlled ion movement during charge and discharge cycles, enabling rapid write-erase configurations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If silver-based dendrites are formed between electrodes to create conducting bridges for memory operation, then write/erase functionality is achieved, but uncontrollable dendrite growth leads to short circuits and reduced reliability after numerous cycles

Engineering Contradiction:
Improvememory operation reliabilityVSAvoiduncontrollable dendrite growth
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent removes the silver electrode from the system entirely, replacing it with a solid electrolyte that directly contacts the inert electrode. This extraction of the reactive silver component eliminates the harmful dendrite growth while preserving the memory functionality through alternative mechanisms involving ion migration and resistance changes in the solid electrolyte.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The solid electrolyte acts as an intermediary between the inert electrode and the external circuit, replacing the direct silver-metal contact. This intermediary prevents direct dendrite formation while still enabling ion transport and resistance modulation necessary for memory operation, thereby eliminating short circuits while maintaining write/erase functionality.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If electrochemical reactions are used in thin film batteries to change resistance, then memory functionality is achieved, but the resistance changes occur slowly

Engineering Contradiction:
Improvememory functionalityVSAvoidresistance change speed
Core Design Contradiction:
ReliabilityVSSpeed

Solution Approach 1:

The patent changes the fundamental parameters of the electrochemical system by using a solid electrolyte with high ionic conductivity and optimizing the thin film structure. This enables faster ion migration rates and quicker resistance changes while maintaining the electrochemical memory functionality, directly addressing the speed limitation of traditional thin film batteries.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution provides a high-speed memory device with improved reliability and sensitivity by controlling conductivity variations with minimal hysteresis, enhancing performance in neuromorphic systems and reducing the need for continuous energy consumption.

Implementation Method 1

barrier means interposed between at least one battery electrode and the battery electrolyte to substantially prevent ions in the electrolyte from reacting with the electrode

Methodology Applied
Scientific EffectPhysical barrier:

Implementation Method 2

an electrolyte layer comprising the cations

Methodology Applied
Scientific EffectIonic conduction: Conduction (electrical)

Implementation Method 3

a cathode layer comprised of a material that can take up cations and discharge cations in a charging and discharging process

Methodology Applied
Scientific EffectElectrochemical reaction: Redox Reactions

Data Source

PatentUS10586591B2High speed thin film two terminal resistive memory
Publication Date: 2020.03.10 INTERNATIONAL BUSINESS MACHINE CORPORATION
  • US10586591B2 patent drawing
  • US10586591B2 patent drawing
  • US10586591B2 patent drawing

AI summary

A high speed thin film two terminal resistive memory article of manufacture comprises a chargeable and dischargeable variable resistance thin film battery having a plurality of layers operatively associated with one another, the plurality of layers comprising in sequence, a cathode-side conductive layer, a cathode layer comprised of a material that can take up cations and discharge cations in a charging and discharging process, an electrolyte layer comprising the cations, a barrier layer, an anode layer, and an optional anode-side conductive layer, the barrier layer comprised of a material that substantially prevents the cations from combining with the anode layer.