Variable Resistance Element Gibbous Moon Shape
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in reducing switching current and simplifying manufacturing processes, particularly in achieving efficient magnetic anisotropy and surface area improvements for variable resistance elements.
Innovation Solution
The development of a variable resistance element with a gibbous moon planar shape, featuring a magnetic tunnel junction structure and ion beam etching techniques to form the pattern, which reduces switching current and enhances manufacturing efficiency by controlling the rotation and pulse periods of the ion beam.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional planar shape (e.g., circular or rectangular) is used for the variable resistance element, then the manufacturing process is simple, but the switching current is high and magnetic anisotropy is insufficient
Solution Approach 1:
The patent applies asymmetry by designing the variable resistance element with a gibbous moon planar shape that includes two curved portions with different curvatures. This asymmetric design creates enhanced magnetic anisotropy and reduces switching current compared to conventional symmetric shapes like circles or rectangles, while maintaining manufacturability through standard photolithography and etching processes.
2Use of energy by moving object
If the switching current is reduced through shape optimization, then the energy consumption decreases, but the manufacturing precision requirements increase
Solution Approach 1:
The patent employs curvature by designing the variable resistance element with two curved portions instead of straight edges. The first curved portion and second curved portion both have defined radii of curvature, which naturally reduce stress concentrations and provide more tolerant manufacturing specifications compared to sharp corners, while still achieving the desired magnetic anisotropy and reduced switching current.
3Reliability
If a complex multi-layer structure is used to improve magnetic anisotropy, then the magnetic properties are enhanced, but the fabrication process complexity increases
Solution Approach 1:
The patent achieves enhanced magnetic anisotropy primarily through the asymmetric gibbous moon planar shape of the variable resistance element rather than through complex multi-layer magnetic structures. This shape-based approach to controlling magnetic properties simplifies the fabrication process by reducing the number of deposition and patterning steps required compared to engineered multi-layer magnetic anisotropy structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The gibbous moon planar shape effectively reduces switching current and improves magnetic anisotropy, making the semiconductor memory more reliable and efficient, while simplifying the fabrication process.
Implementation Method 1
forming a variable resistance pattern by etching the variable resistance layer, wherein the forming of the variable resistance pattern includes performing an ion beam etching in which an ion beam is supplied in a pulse form while rotating the wafer
Implementation Method 2
The gibbous moon planar shape effectively reduces switching current and improves magnetic anisotropy
Data Source
AI summary
The disclosed technology includes an electronic device. The electronic device includes a semiconductor memory, and the semiconductor memory includes a variable resistance element that exhibits different resistance states for storing different data and is structured to include a planar shape including two curved potions of different curvatures.