Variable Resistance Element Sidewall Magnetic Compensation
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Solution Overview
Problem
The existing semiconductor devices face challenges in reducing the etch burden during the patterning process, which can lead to sidewall damage and electrical shorting due to re-deposition of etch products, and the magnetic characteristics of the variable resistance elements are compromised by stray magnetic fields.
Innovation Solution
A semiconductor device with a reduced total thickness is designed, featuring a pillar-shaped magnetic compensation layer with horizontal magnetization, which is formed on the sidewalls of the variable resistance element to mitigate stray magnetic field effects and enhance etch margin, while maintaining improved magnetic characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the total thickness of the variable resistance element is reduced, then the etch margin is improved and sidewall damage is minimized, but the magnetic compensation capability may be compromised
Solution Approach 1:
The magnetic compensation layer is repositioned from a vertical configuration (within the stacked structure) to a horizontal configuration (on the sidewalls). This dimensional change allows the compensation function to be maintained while reducing the vertical thickness of the variable resistance element, thereby improving etch margin without sacrificing magnetic compensation capability.
Solution Approach 2:
The magnetic compensation function is separated from the main stacked structure and placed on the sidewalls as distinct pillar-shaped layers. This segmentation allows the compensation layer to operate independently while maintaining the reduced thickness of the core variable resistance element, resolving the contradiction between thickness reduction and compensation capability.
2Reliability
If a magnetic compensation layer is formed within the stacked structure, then magnetic field compensation is achieved, but the total thickness increases and etch burden is increased
Solution Approach 1:
The magnetic compensation layer is moved from the vertical dimension (within the stacked structure) to the horizontal dimension (on the sidewalls). This allows magnetic field compensation to be achieved without increasing the total vertical thickness of the variable resistance element, thereby simplifying the device structure and reducing etch burden.
3Reliability
If conventional vertical magnetization material is used for the magnetic compensation layer, then the magnetic compensation effect is achieved, but the process difficulty increases due to non-uniform magnetic field entry
Solution Approach 1:
The magnetic compensation layer is designed with local horizontal magnetization properties rather than uniform vertical magnetization. This local quality change ensures that magnetic fields enter the layer uniformly from all directions, simplifying the fabrication process while maintaining effective magnetic compensation. The pillar-shaped geometry on the sidewalls naturally facilitates uniform field distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces the etch burden, minimizes sidewall damage, and maintains strong magnetic characteristics, allowing for efficient patterning and reliable operation of the semiconductor device.
Implementation Method 1
a magnetic compensation layer formed on the sidewall and having horizontal magnetization
Implementation Method 2
the magnetic compensation layer comprises a conductive material having a horizontal magnetization
Implementation Method 3
secures an etch margin for a patterning process by reducing the total thickness of a variable resistance element when a variable resistance element is formed
Data Source
AI summary
An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a variable resistance element having a stacked structure of a first magnetic layer, a tunnel barrier layer, and a second magnetic layer; and a protection layer including a pillar-shaped magnetic compensation layer and a non-magnetic layer, which are formed on the sidewall of the variable resistance element.