Variable Resistance Element Rectifying Configuration for Semiconductor Density

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Solution Overview

Problem

The integration of two-terminal-type variable-resistance elements in semiconductor devices requires one selection transistor per element, leading to increased area and potential for erroneous writes and malfunctions, which reduces reliability and density.

Innovation Solution

A semiconductor device comprising a bipolar-type variable-resistance element in a copper multilayer wiring layer with a rectifying element configuration, where the first and second variable-resistance elements are connected to the rectifying elements, allowing for independent programming and reducing the need for additional transistors, thereby enhancing reliability and density.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If one selection transistor is used per variable-resistance element, then the element can be controlled, but the device area increases and density decreases

Engineering Contradiction:

Improvecontrol accuracyVSAvoiddevice area

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the selection function with the variable-resistance element structure itself by using rectifying elements formed in the same multilayer wiring layer. This integration eliminates the need for separate selection transistors for each variable-resistance element, reducing device area while maintaining control capability through the rectifying elements' inherent selection properties.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The multilayer wiring layer structures serve multiple functions: they act as both interconnect wiring and as rectifying elements for selecting variable-resistance elements. This multi-functionality allows the same structural layer to perform both signal transmission and element selection, eliminating the need for additional dedicated selection transistors and improving device density.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If one selection transistor is used per variable-resistance element, then the element can be controlled, but the device complexity increases

Engineering Contradiction:

Improvecontrol accuracyVSAvoidtransistor count

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the selection transistor functionality into the multilayer wiring structure itself through rectifying elements. This merging reduces device complexity by eliminating separate transistor components while maintaining the ability to selectively control individual variable-resistance elements through the rectifying elements' diode-like characteristics.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The rectifying elements formed in the multilayer wiring layer provide self-service selection functionality without requiring external control transistors. The inherent rectifying properties of these elements enable them to automatically perform the selection function based on voltage polarity, reducing the overall device complexity and transistor count.

Inventive Principle:

Principle #25Self-service

3Ease of manufacture

If conventional variable-resistance element configuration is used, then the basic function is achieved, but erroneous writes and malfunctions occur

Engineering Contradiction:

Improvemanufacturing simplicityVSAvoidwrite accuracy

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent introduces rectifying elements as intermediary components between the control circuitry and the variable-resistance elements. These rectifying elements act as mediators that prevent erroneous writes by ensuring that programming signals are applied only to the intended variable-resistance elements, thereby improving write accuracy while maintaining manufacturing simplicity through the use of standard multilayer wiring processes.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration prevents erroneous writes and malfunctions, increases the density of the semiconductor device, and improves reliability by allowing for independent programming of the variable-resistance elements without the need for additional transistors.

Implementation Method 1

a first rectifying element and a second rectifying element inside the multilayer wiring layer

Methodology Applied

Scientific EffectRectification: Diode

Implementation Method 2

precipitation of metal by reduction of a metal ion and generation of a metal ion by oxidation of metal by an electrochemical reaction

Methodology Applied

Scientific EffectElectrochemical reaction: Redox Reactions

Implementation Method 3

form a filament inside the variable-resistance film or to form a conductive path between the two electrodes

Methodology Applied

Scientific EffectFilament formation:

Data Source

PatentUS10312288B2Switching element, semiconductor device, and semiconductor device manufacturing method

Publication Date: 2019.06.04 NANOBRIDGE SEMICON INC

AI summary

In the cases of performing programming by forming a two-terminal-type variable resistance element on a semiconductor device, it has been difficult to control the programming, and malfunctions have often occurred. This switching element includes at least a first variable resistance element, a second variable resistance element, a first rectifying element, and a second rectifying element, one end of the first variable resistance element and one end of the second variable resistance element are respectively connected to one end of the first rectifying element and one end of the second rectifying element, and each of the rectifying elements has two terminals.