Variable Resistance Element Stack Segmentation for Etching Margin
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Solution Overview
Problem
In the fabrication of semiconductor memory devices with variable resistance elements, the etching margin is limited due to the thickness of the magnetism correcting layer, leading to degraded magnetic properties and increased processing difficulty, including circuit shorting and prolonged etching times.
Innovation Solution
The implementation of a semiconductor memory device with a reduced total thickness of the variable resistance element stack, where the magnetism correcting layer is formed separately from the element, reducing etching burden and improving magnetic properties, and using a material with horizontal magnetization to mitigate stray magnetic field effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the magnetism correcting layer is formed as part of the variable resistance element stack, then the magnetic properties can be corrected, but the total thickness increases and etching margin is reduced
Solution Approach 1:
The magnetism correcting layer is separated from the variable resistance element stack into an independent structure. This segmentation allows the element stack to maintain optimal thickness for etching while the correcting layer provides magnetic field correction independently, resolving the contradiction between magnetic property correction and etching margin preservation.
Solution Approach 2:
The magnetism correcting layer acts as an intermediary component positioned adjacent to the variable resistance element rather than integrated within it. This intermediary positioning enables magnetic field correction without adding thickness to the etched stack, maintaining etching precision while achieving magnetic property correction.
2Manufacturing precision
If the total thickness of the variable resistance element stack is reduced to improve etching margin, then etching process becomes easier, but the magnetic property correction capability is compromised
Solution Approach 1:
By segmenting the magnetism correcting function from the variable resistance element stack, the invention enables the stack to be kept thin for easy etching while the separate correcting layer provides the necessary magnetic property correction, thus resolving the contradiction between etching ease and magnetic property maintenance.
Solution Approach 2:
The magnetism correcting layer is positioned in a different spatial dimension (adjacent rather than integrated within the stack thickness), allowing it to provide magnetic correction functionality without increasing the critical thickness dimension that affects etching margin. This dimensional repositioning resolves the contradiction between thin-stack etching ease and magnetic correction capability.
3Reliability
If the magnetism correcting layer is made thicker to improve magnetic field correction, then magnetic properties improve, but processing difficulty increases and circuit shorting risk increases
Solution Approach 1:
Separating the magnetism correcting layer from the variable resistance element stack allows the correcting layer to be optimized independently for magnetic properties without compromising the element stack's etching characteristics. This segmentation enables effective magnetic field correction while maintaining ease of manufacturing and reducing circuit shorting risk.
Solution Approach 2:
The magnetism correcting layer is positioned locally adjacent to specific regions of the variable resistance element where magnetic field correction is needed, rather than being uniformly distributed throughout the stack. This localized positioning provides effective magnetic correction while minimizing the overall material volume and processing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the etching margin, reduces processing difficulty, and improves the magnetic properties of the variable resistance element, while minimizing damage from etching byproducts and re-deposition, thereby improving the reliability of the semiconductor memory devices.
Implementation Method 1
a magnetism correcting layer that produces a magnetic field at the variable resistance element to reduce an influence of a magnetic field of the second magnetic layer on the first magnetic layer
Data Source
AI summary
The disclosed technology provides an electronic device and a fabrication method thereof, in which an etching margin in formation of a variable resistance element is secured and process difficulty is reduced. An electronic device according to an implementation includes a semiconductor memory, the semiconductor memory including: a variable resistance element including a stack of a first magnetic layer, a tunnel barrier layer and a second magnetic layer; a contact plug coupling a top of the variable resistance element and including a magnetism correcting layer; and a conductive line coupled to the variable resistance element through the contact plug including the magnetism correcting layer.