Variable Resistance Fuse Unit for Semiconductor Faulty Address Control
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Solution Overview
Problem
The existing semiconductor memory apparatuses face challenges due to increasing faulty memory cells as integration increases, requiring redundancy cells and costly laser-based methods for faulty address storage, which affect device integrity and manufacturing costs.
Innovation Solution
A semiconductor memory apparatus utilizing a variable resistance fuse unit driven by an address signal, with resistance values determined by applied current, to store and compare addresses, enabling efficient faulty address control through a faulty address control circuit and method.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If laser beam method is used to blow metal fuses for storing faulty addresses, then faulty address storage is achieved, but manufacturing cost increases and device integrity is affected
Solution Approach 1:
The patent replaces the mechanical/optical laser beam system with an electrical current-based system. Instead of using laser beams to blow metal fuses, the invention applies electrical current to variable resistance elements (such as phase change materials) to change their resistance states, thereby storing faulty address information electrically rather than mechanically/optically.
Solution Approach 2:
The patent changes the physical parameter used for address storage from mechanical fusion (laser-induced metal melting) to electrical resistance change. By applying current to variable resistance elements and changing their resistance values between different states (e.g., high resistance and low resistance states), the faulty address information is stored through parameter change rather than physical destruction.
2Adaptability or versatility
If laser beam equipment is used for faulty address storage, then address repair function is achieved, but device integrity deteriorates
Solution Approach 1:
The patent substitutes the laser beam system with an electrical current system, eliminating the harmful thermal and mechanical effects of laser irradiation on the device structure while maintaining the address repair functionality through electrical resistance changes in variable resistance elements.
Solution Approach 2:
The patent uses replaceable variable resistance elements that can be programmed to different resistance states without damaging the overall device structure. These elements serve as disposable or reconfigurable components for storing faulty address information, avoiding permanent structural damage to the device.
3Ease of operation
If metal fuses are blown to store faulty addresses, then faulty address identification is enabled, but manufacturing complexity increases
Solution Approach 1:
The patent replaces the complex laser beam control and metal fuse blowing process with a simpler electrical current application process. The manufacturing complexity is reduced by substituting optical/metalworking equipment with electrical programming equipment that can set resistance values of variable resistance elements.
Solution Approach 2:
The patent simplifies the manufacturing process by changing from a physical destruction process (blowing fuses) to a parameter setting process (programming resistance values). This allows faulty address information to be stored by simply setting different resistance states, reducing manufacturing complexity while maintaining identification capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces manufacturing costs and improves device integrity by efficiently storing and determining faulty addresses using variable resistance elements, allowing for effective access to either main or redundancy memory cells without the need for expensive laser equipment.
Implementation Method 1
a variable resistance fuse unit configured to be driven in response to an address signal, a resistance value of the variable resistance fuse unit being determined based on an amount of an applied current to the variable resistance fuse unit
Data Source
AI summary
A faulty address control circuit comprises a variable resistance fuse unit configured to be driven in response to an address signal, a resistance value of the variable resistance fuse unit being determined based on an amount of an applied current; a driving unit configured to output a driving signal based on the resistance value of the variable resistance fuse unit in response to a faulty address control signal; and an address storage and determination unit configured to receive the address signal, be driven by the driving signal to output the address signal or an inverted signal of the address signal.