Variable Resistance Memory Cell Random Number Generation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing random number generation technologies face challenges in achieving high-security cryptographic requirements due to large size and high power consumption in ultra-small devices like IC cards, with difficulties in generating non-deterministic random numbers efficiently and quickly, especially in battery-less IC cards and devices handling large digital data.
Innovation Solution
A random number processing apparatus utilizing a memory cell with a variable resistance element that shifts between resistance value ranges in response to electric signals, allowing for fast and efficient generation of random numbers by reading resistance value fluctuations, which are then used to generate high-quality random number data.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate circuit for generating random numbers is added to utilize physical phenomena, then the randomness quality is improved, but the device size increases and becomes difficult to apply to ultra-small devices
Solution Approach 1:
The patent combines the random number generation function with an existing memory cell structure. The memory cell's variable resistance element inherently exhibits random resistance fluctuations due to physical phenomena (such as trap states and carrier transport variations), allowing the same hardware component to serve both as storage/memory and as a random number generator, thereby eliminating the need for a separate dedicated circuit.
Solution Approach 2:
The memory cell is designed to perform multiple functions: it can store data in conventional modes and generate random numbers in a special mode by utilizing the random fluctuations in resistance values of the variable resistance element. This multi-functionality reduces overall device complexity and size while maintaining high-quality random number generation.
2Area of stationary object
If conventional random number generation methods are used, then the circuit size is reduced, but the power consumption increases and generation speed decreases
Solution Approach 1:
The variable resistance element in the memory cell naturally exhibits random resistance fluctuations due to intrinsic physical phenomena (trap states, carrier transport variations). The system harvests this naturally occurring randomness without requiring additional power-intensive external random number generation circuits, thereby reducing overall power consumption while maintaining small circuit size.
3Reliability
If non-deterministic random numbers are generated using physical phenomena, then the security is enhanced, but the generation speed is slow and power consumption is high
Solution Approach 1:
The memory cell continuously exhibits random resistance fluctuations in the variable state without requiring periodic external stimulation. Multiple resistance values can be read continuously over time, allowing for high-speed generation of random numbers while maintaining security through the inherent non-deterministic physical phenomena.
Solution Approach 2:
The system can periodically sample the resistance values of the variable resistance element at different time points. By applying read signals at regular intervals and collecting multiple resistance measurements, the system efficiently generates multiple random numbers in sequence, improving generation speed while maintaining the security benefits of physical randomness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the generation of high-quality random numbers at a faster rate with lower power consumption, reducing the size of the random number generation circuit and enhancing security in cryptographic applications, particularly in ultra-small devices.
Implementation Method 1
a variable resistance element, the memory cell being shiftable from an initial state to a variable state by applying a forming stress that is an electric signal to the memory cell
Data Source
Figure 1~2
Figure 3
Figure 4
AI summary
A random number processing apparatus includes a memory cell and a control circuitry. The memory cell has a characteristic in which a resistance value reversibly shifts between a plurality of resistance value ranges in accordance with an electric signal applied. The control circuitry generates random number data on the basis of a plurality of items of resistance value information obtained, at a plurality of different times, from the memory cell whose resistance value is in a certain resistance value range of the plurality of resistance value ranges. The resistance value of the memory cell randomly changes over time while the resistance value is within the certain resistance value range.