Variable Resistive Element With Bump Electrode Reducing Current Consumption
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Solution Overview
Problem
Conventional nonvolatile memory devices using variable resistive elements face challenges in reducing the area of the electrically contributing region in the variable resistor body, leading to higher current consumption and instability in programming operations due to smaller resistance values and parasitic currents.
Innovation Solution
A variable resistive element configuration with a bump electrode material extending towards the other electrode, forming a smaller electrically contributing region, and a manufacturing method that includes forming a bump electrode material along the sidewall of an insulating film to reduce the contact area between the electrodes and the variable resistor body.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the contact area between electrodes and variable resistor body is reduced to lower current consumption, then current consumption decreases, but programming stability deteriorates due to parasitic currents
Solution Approach 1:
The invention transitions from planar contact geometry to three-dimensional bump electrode structures. The bump electrodes protrude into the variable resistor body, creating vertical sidewalls that provide lateral confinement. This dimensional change allows the contact area to be reduced while maintaining programming stability through the sidewall effects that suppress parasitic currents.
Solution Approach 2:
The invention applies different geometric properties to different regions of the electrode structure. The bump electrodes have enlarged contact areas at their bases for stable electrical connection, while their sidewalls provide lateral confinement with reduced top surface area. This local differentiation allows simultaneous optimization of electrical connection stability and parasitic current suppression.
2Area of moving object
If the electrically contributing region area is reduced to improve device scaling, then device area decreases, but resistance value control becomes difficult due to parasitic currents
Solution Approach 1:
The invention uses three-dimensional bump electrode structures to define the electrically contributing region. The sidewalls of the bump electrodes create vertical boundaries that confine the variable resistor material, allowing precise control of the active region area through the bump electrode dimensions rather than relying solely on planar lithography patterns.
Solution Approach 2:
The bump electrode sidewalls act as intermediary structures that mediate between the electrode and the variable resistor body. These sidewalls provide lateral confinement to the variable resistor material, effectively defining the electrically contributing region boundaries and enabling precise resistance control through the geometric parameters of the bump electrodes.
3Use of energy by moving object
If bump electrode material is formed along sidewall of insulating film to reduce contact area, then contact area decreases improving current consumption, but manufacturing complexity increases
Solution Approach 1:
The insulating film with sidewalls is formed beforehand to serve as a template for the bump electrode material deposition. This preliminary structuring allows the bump electrodes to be formed conformally along the sidewalls, automatically achieving the desired reduced contact area geometry without requiring complex post-processing steps or precise alignment procedures.
Solution Approach 2:
The bump electrode material conformally deposits along the insulating film sidewalls, using the sidewall geometry itself to define the final electrode shape. The sidewalls serve as self-aligning templates that automatically position and dimension the bump electrodes, eliminating the need for separate alignment and patterning steps that would increase manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces current consumption and enables stable switching operations by minimizing the contact area, preventing programming failures and allowing for reproducible memory element manufacturing with smaller electrically contributing regions.
Implementation Method 1
an electrical resistance of the variable resistive element is changed by applying a voltage pulse between both of the electrodes
Implementation Method 2
a line width of a contact surface of between the variable resistor body and at least one of the two electrodes is formed to be narrower than the line width of any of the two electrodes
Data Source
AI summary
A variable resistive element comprising a configuration that an area of an electrically contributing region of a variable resistor body is finer than that constrained by an upper electrode or a lower electrode and its manufacturing method are provided. A bump electrode material is formed on a lower electrode arranged on a base substrate. The bump electrode material is contacted to a variable resistor body at a surface different from a contact surface to the lower electrode. The variable resistor body is contacted to an upper electrode at a surface different from a contact surface to the bump electrode material. Thus, a cross point region between the bump electrode material (the variable resistor body) and the upper electrode becomes an electrically contributing region of the variable resistor body, and then an area thereof can be reduced compared with that of the region regarding the conventional variable resistive element.