Variable-Shaped Electron Beam Lithography Throughput Optimization

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Solution Overview

Problem

Variable-shaped electron beam lithography systems face challenges in achieving high throughput while maintaining beam resolution due to the increase in complexity and fineness of patterns, as higher current density leads to defocusing effects and longer pattern writing times.

Innovation Solution

A writing apparatus and method that selectively adjusts the current density and maximal shot size or area of the electron beam based on input pattern data, optimizing the beam's current density and shot size to minimize writing time without degrading resolution, by identifying a point of inflection in the writing time curve where throughput is maximized.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If higher current density is used to reduce writing time, then productivity is improved, but beam resolution deteriorates due to defocusing effects

Engineering Contradiction:
Improvewriting speedVSAvoidbeam resolution
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent implements dynamic adjustment of electron beam parameters during the writing process. The system varies current density and shot size adaptively based on pattern requirements, allowing optimization of both writing speed and resolution for different regions and features. This dynamic control enables the beam parameters to be tuned in real-time, resolving the contradiction between maintaining high speed and preserving resolution.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention systematically changes key beam parameters including current density, shot size, and acceleration voltage to optimize performance. By establishing optimal parameter combinations and using inflection point analysis on writing time curves, the system identifies settings that maximize productivity while maintaining acceptable resolution, thus resolving the trade-off between writing speed and beam quality.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If smaller shot size is used to maintain beam resolution, then manufacturing precision is improved, but productivity deteriorates due to increased total shot number

Engineering Contradiction:
Improvebeam resolutionVSAvoidthroughput
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent employs systematic parameter optimization by analyzing writing time as a function of current density and shot size. Through inflection point analysis, the invention identifies optimal parameter combinations where further reduction in shot size yields diminishing returns in resolution but continues to reduce throughput. This data-driven approach determines the optimal balance point between resolution and productivity.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The system dynamically adjusts shot size based on pattern complexity and feature requirements rather than using a fixed small shot size throughout. This adaptive approach allows larger shots to be used where high resolution is not critical, maintaining throughput, while switching to smaller shots only where needed for fine features, thus resolving the contradiction between resolution and productivity.

Inventive Principle:
Principle #15Dynamics

3Ease of operation

If fixed beam parameters are used to simplify operation, then ease of operation is improved, but adaptability deteriorates for complex and varied patterns

Engineering Contradiction:
Improveparameter setting simplicityVSAvoidpattern optimization capability
Core Design Contradiction:
Ease of operationVSAdaptability or versatility

Solution Approach 1:

The patent implements automated parameter optimization systems that self-adjust beam parameters based on input pattern data. The system automatically performs inflection point analysis and selects optimal current density and shot size settings without requiring manual operator intervention. This self-service capability maintains ease of operation while dramatically improving adaptability to different pattern types and complexities.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The invention incorporates feedback mechanisms where writing time measurements and pattern analysis results are used to automatically adjust beam parameters for subsequent writing operations. This closed-loop control enables the system to learn from previous operations and optimize parameters adaptively, resolving the contradiction between simple operation and high adaptability.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for increased throughput in electron beam lithography while preventing beam resolution degradation, by dynamically adjusting the electron beam's current density and shot size to match the pattern's requirements, thereby reducing the total shot number and writing time.

Implementation Method 1

an electron beam creating unit for creating an electron beam with the current density; a beam shaping unit for shaping the created electron beam into a shot size less than or equal to the maximal shot size in units of shots

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Data Source

PatentUS7485879B2Electron beam writing apparatus and writing method
Publication Date: 2009.02.03 NUFLARE TECH INC
  • US7485879B2 patent drawing
  • US7485879B2 patent drawing
  • US7485879B2 patent drawing

AI summary

A writing apparatus including a selector unit responsive to receipt of input data of a pattern to be written by shots of irradiation of an electron beam, configured to select a current density of the electron beam being shot and a maximal shot size thereof based on the input data of the pattern to be written; and a writing unit configured to create an electron beam with the current density selected by said selector unit, shape the created electron beam into a shot size less than or equal to said maximal shot size in units of the shots, and shoot the shaped electron beam onto a workpiece to thereby write said pattern.