Variable Space Mandrel Cut for Self-Aligned Double Patterning

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Solution Overview

Problem

Traditional semiconductor manufacturing techniques for achieving high resolution in small pitches face challenges with increased manufacturing costs and parasitic performance due to reliance on multiple steps and additional materials for patterning and cutting.

Innovation Solution

A method involving the formation of mandrels on a substrate, followed by the creation of spacers and selective etching to form variable space cuts, which are then filled with material to reduce parasitic capacitance and enhance design flexibility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional multiple-step patterning techniques are used to achieve high resolution in small pitches, then manufacturing precision is improved, but device complexity and manufacturing cost increase

Engineering Contradiction:
Improvepitch resolutionVSAvoidnumber of patterning steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines the mandrel cutting operation with the spacer formation process into a single integrated step. The mandrel is patterned with variable spacing regions that directly define the spacer locations, eliminating the need for separate cutting and patterning steps. This merging reduces process complexity while maintaining the ability to achieve high-resolution patterns at small pitches.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The mandrel is pre-patterned with variable spacing regions before spacer formation. This preliminary action defines the exact locations where spacers will be formed, allowing subsequent spacer deposition to automatically create the desired pattern without requiring additional cutting or patterning steps. The preliminary mandrel structure serves as a self-aligned template for the final pattern.

Inventive Principle:
Principle #10Preliminary action

2Adaptability or versatility

If additional materials and multiple steps are used for patterning and cutting, then design flexibility is improved, but parasitic performance deteriorates

Engineering Contradiction:
Improvedesign flexibilityVSAvoidparasitic capacitance
Core Design Contradiction:
Adaptability or versatilityVSObject-generated harmful factors

Solution Approach 1:

The mandrel structure incorporates variable spacing regions with different local geometries - some regions have closely spaced mandrels while others have widely spaced or cut mandrels. This local quality variation allows different functional regions to be created within the same structure, providing design flexibility for complex patterns while using only the essential spacer material without unnecessary additional layers that would increase parasitic capacitance.

Inventive Principle:
Principle #3Local quality

3Adaptability or versatility

If traditional cutting techniques are used, then pattern variation is improved, but manufacturing cost increases

Engineering Contradiction:
Improvepattern variationVSAvoidmanufacturing cost
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The cutting operation is merged with the spacer formation process. The same etching step that removes mandrel material to create variable spacing regions also defines the spacer formation areas. This consolidation eliminates separate cutting steps and reduces material usage, lowering manufacturing cost while maintaining the ability to create diverse patterns through variable mandrel spacing.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for reduced parasitic capacitance by approximately 3% and improved design flexibility, while maintaining manufacturing efficiency by integrating the mandrel cut with spacer material, thus addressing the limitations of traditional techniques.

Implementation Method 1

forming spacers about the plurality of mandrels

Methodology Applied
Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Implementation Method 2

forming spacers about the plurality of mandrels

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 3

removing a portion of at least one of the plurality of mandrels to form a cut along a length

Methodology Applied
Scientific EffectEtching:

Data Source

PatentUS10199265B2Variable space mandrel cut for self aligned double patterning
Publication Date: 2019.02.05 GLOBALFOUNDRIES US INC
  • US10199265B2 patent drawing
  • US10199265B2 patent drawing
  • US10199265B2 patent drawing

AI summary

The present disclosure relates to semiconductor structures and, more particularly, to variable space mandrel cut for self-aligned double patterning and methods of manufacture. The method includes: forming a plurality of mandrels on a substrate; forming spacers about the plurality of mandrels and exposed portions of the substrate; removing a portion of at least one of the plurality of mandrels to form an opening; and filling in the opening with material.