Variable Width Nano-Sheet FinFET Cell Layout Optimization
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Solution Overview
Problem
Existing integrated circuit (IC) designs face challenges in optimizing the driving ability, speed, power, and area of IC devices due to the constraint of constant width rows of nano-sheet FinFETs in cells.
Innovation Solution
The proposed solution involves generating an IC layout diagram that includes nano-sheet FinFETs with nano-sheet structures of different widths, where a wider nano-sheet structure is abutted to a narrower one within the same cell, optimizing the cell height and enabling finer granularity in IC device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If constant width rows of nano-sheet structures are used in FinFETs, then manufacturing simplicity is maintained, but driving ability, speed, power, and area optimization are limited
Solution Approach 1:
The patent applies local quality by varying the width of individual nano-sheet structures within different active regions of the same cell. Specifically, first nano-sheet structures have a first width in first active regions, while second nano-sheet structures have a second width in second active regions, allowing each region to be optimized for its specific function (e.g., drive strength, speed, power) rather than using a uniform width throughout the cell
Solution Approach 2:
The cell is segmented into multiple active regions (first active regions and second active regions) with differently sized nano-sheet structures. This segmentation allows independent optimization of transistor performance characteristics within each region, enabling fine-grained control over driving ability, speed, power, and area without requiring complete redesign of the entire cell structure
2Manufacturing precision
If wider nano-sheet structures are abutted to narrower ones within the same cell, then finer granularity in IC device performance is achieved, but structural complexity increases
Solution Approach 1:
The patent employs asymmetry by abutting nano-sheet structures of different widths (first width and second width) adjacent to each other within the same cell. The first nano-sheet structures have a first width while the second nano-sheet structures have a second width, creating an asymmetric configuration that enables precise optimization of cell height and transistor performance for different functional requirements within the same cell boundary
Data Source
AI summary
One aspect of this description relates to a method for operating an integrated circuit (IC) manufacturing system. The method includes placing a first nano-sheet structure within a IC layout diagram. The first nano-sheet structure has a first width. The method includes abutting a second nano-sheet structure with the first nano-sheet structure. The second nano-sheet structure has a second width. The second width is less than the first width. The method includes generating and storing the IC layout diagram in a storage device.