Variable-Width Nanostructures in GAA Transistors for Gate Control
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Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing low-cost, high-performance, and low-power integrated circuits due to increased complexity in scaling down semiconductor IC dimensions, which has introduced issues like short-channel effects and reduced gate control.
Innovation Solution
The implementation of gate-all-around (GAA) transistors with varying fin structures and nano wires of different widths, utilizing double-patterning or multi-patterning processes to create precise semiconductor devices, including the formation of nano sheet or nano wire fins surrounded by gate structures, enhancing gate control and reducing short-channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor IC dimensions are scaled down to improve production efficiency and lower costs, then productivity and cost-effectiveness are improved, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The patent applies segmentation by dividing the gate formation process into multiple discrete steps: forming sacrificial fins, depositing first spacers, forming second spacers, and creating nanostructure fins. This multi-stage patterning process enables precise control of nanoscale dimensions while managing manufacturing complexity through systematic breakdown of the fabrication sequence
Solution Approach 2:
The patent transitions from two-dimensional planar transistors to three-dimensional gate-all-around structures by forming vertical fins and surrounding gates that wrap around the channel from all directions. This dimensional evolution enables continued scaling and performance improvement as device dimensions are reduced to nanoscale regimes
2Reliability
If conventional transistor structures are used, then manufacturing process is simpler, but gate control is insufficient and short-channel effects increase
Solution Approach 1:
The patent implements gate-all-around structures where the gate electrode completely surrounds the channel region in three dimensions, providing curvature-based control from all directions. This spherical/gate-wraparound geometry maximizes electric field control over the channel, suppressing short-channel effects and improving threshold voltage control compared to planar structures
Solution Approach 2:
The patent employs nested structures where sacrificial fins are formed first, then spacers are deposited around them, followed by removal of sacrificial material and formation of nanostructure fins within the spacer-defined regions. This nested fabrication approach enables precise dimensional control and complex 3D geometries while managing process complexity
Data Source
AI summary
A semiconductor structures and a method for forming the same are provided. The semiconductor structure includes first nanostructures and second nanostructures spaced apart from the first nanostructures in a first direction. A left-most point of the first nanostructures and a left-most point of the second nanostructures has a first distance in the first direction. The semiconductor structure further includes first source/drain features attached to opposite sides of the first nanostructures in a second direction being orthogonal to the first direction and third nanostructures and fourth nanostructures spaced apart from the third nanostructures in the first direction. A left-most point of the third nanostructures and a left-most point of the fourth nanostructures has a second distance in the first direction. In addition, the third nanostructures are wider than the first nanostructures in the first direction, and the first distance is smaller than the second distance.