Varied Angle Slot Array for Ion Beam Incidence Measurement
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Solution Overview
Problem
In semiconductor device fabrication, ion implantation processes face challenges due to calibration errors in the angle of incidence of ion beams, leading to incorrect doping profiles, unintended implantation areas, and potential damage to device structures, especially as device dimensions shrink.
Innovation Solution
The implementation of a varied angle slot array system with charge measurement sensors to detect and correct the angle of incidence of ion beams during ion implantation, allowing for precise measurement and adjustment of the beam's angle to ensure accurate doping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation is performed without angle measurement and correction, then the process is simple and fast, but the manufacturing precision and reliability deteriorate due to angular errors causing incorrect doping profiles and unintended implantation areas
Solution Approach 1:
The patent replaces complex mechanical angle adjustment and measurement systems with a slot array-based optical/detector system. The slot array structure inherently provides angle-dependent signal modulation, eliminating the need for traditional mechanical goniometers or complex positioning mechanisms while achieving high angular precision for ion beam alignment
Solution Approach 2:
The slot array system performs self-calibration and self-measurement of the ion beam angle. The geometric arrangement of slots automatically converts angular information into detectable signal variations, allowing the system to determine its own alignment status without requiring external reference standards or complex calibration procedures
2Measurement precision
If traditional angle measurement methods are used, then the system is simpler, but the measurement precision is insufficient for modern semiconductor device dimensions
Solution Approach 1:
The detection system is segmented into multiple slots arranged in an array, where each slot responds to a specific angular range of the ion beam. This segmentation converts a single complex angular measurement into multiple simpler signal readings, enabling high-precision angle determination through signal processing while maintaining relatively simple individual slot structures
Solution Approach 2:
The patent transitions from one-dimensional angle measurement to two-dimensional angular space measurement using the slot array geometry. The array configuration allows simultaneous measurement of angle components in multiple directions, providing comprehensive angular characterization of the ion beam with enhanced precision suitable for modern semiconductor fabrication
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables precise control of ion beam angles, ensuring accurate doping profiles and preventing damage to semiconductor devices by allowing for real-time correction of angular errors, thereby enhancing the reliability and precision of the ion implantation process.
Implementation Method 1
The slot arrays select one or more beamlets from ion beams according to varied acceptance angles
Implementation Method 2
Charge measurement sensors, such as pickup sensors, measure charge or beam current associated with each of the slots of the array
Data Source
AI summary
An angle measurement system for measuring angles of incidence for ion beams during ion implantation includes a varied angle slot array and an array of charge measurement devices located downstream of the varied angle slot array. The varied angle slot array includes slots formed within a structure from an entrance surface to an exit surface. Each of the slots has a varied acceptance angle range. The array of charge measurement devices are individually associated with the slots and can measure charge or beam current for beamlets that pass through the slots. These measurements and the varied or different acceptance angle ranges can then be employed to determine a measured angle of incidence and/or angular content for an ion beam.