Varying Thickness Anti-Reflective Layer for Image Sensors

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Solution Overview

Problem

Conventional CMOS image sensors face issues with low quantum efficiency and cross-talk due to light losses when using Front Side Illumination, while Back Side Illumination sensors have improved efficiency but can benefit from enhanced anti-reflectivity to optimize light sensing sensitivity across specific wave bands.

Innovation Solution

An anti-reflective layer with varying thicknesses is formed between the substrate and color filters, specifically designed to improve anti-reflectivity and light transmission by tailoring thicknesses to correspond with different color filters, such as blue, green, and red filters, to enhance light penetration and sensitivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a single thickness anti-reflective layer is used, then the manufacturing process is simple, but the anti-reflectivity in specific wave bands is insufficient

Engineering Contradiction:
Improveanti-reflective layer fabrication simplicityVSAvoidanti-reflectivity performance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent applies local quality by varying the thickness of the anti-reflective layer at different locations corresponding to different color filters. Each region has a locally optimized thickness tailored to the specific wavelength range of its associated color filter, thereby improving anti-reflectivity for each color band while maintaining a relatively simple single-layer structure.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the physical parameter of thickness across different regions of the anti-reflective layer. By adjusting the thickness parameter locally rather than maintaining a uniform thickness, the structure achieves optimized optical performance for multiple wavelength ranges while still being a single continuous layer, balancing manufacturing simplicity with performance improvement.

Inventive Principle:
Principle #35Parameter changes

2Ease of manufacture

If Front Side Illumination is used, then the manufacturing process is simple, but light losses occur causing low quantum efficiency

Engineering Contradiction:
ImproveFSI manufacturing simplicityVSAvoidlight transmission efficiency
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The patent changes the thickness parameter of the anti-reflective layer to optimize light transmission. By carefully controlling the thickness to be a quarter-wavelength or odd multiples thereof for specific color ranges, the structure minimizes reflectivity and maximizes light transmission to the photodiodes, thereby improving quantum efficiency while maintaining the simpler FSI architecture.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The anti-reflective layer with different thicknesses increases anti-reflectivity by 5% to 10% in specific wave bands, improving the overall optical transmission and light sensing sensitivity of the image sensor compared to a single thickness layer.

Implementation Method 1

An anti-reflective layer with varying thicknesses is formed between the substrate and color filters, specifically designed to improve anti-reflectivity and light transmission

Methodology Applied
Scientific EffectAnti-reflective coating: Anti-Reflective Coating

Implementation Method 2

parts of the anti-reflective layer corresponding to at least two of the color filters have different thicknesses... increases anti-reflectivity by 5% to 10% in specific wave bands

Methodology Applied
Scientific EffectLight interference: Interference

Data Source

PatentUS8779484B2Image sensor and process thereof
Publication Date: 2014.07.15 UNITED MICROELECTRONICS CORP
  • US8779484B2 patent drawing
  • US8779484B2 patent drawing
  • US8779484B2 patent drawing

AI summary

An image sensor includes a plurality of color filters and an anti-reflective layer. The color filters are located on a substrate. The anti-reflective layer is located between the substrate and the color filters, and parts of the anti-reflective layer corresponding to at least two of the color filters have different thicknesses. Moreover, an image sensing process including the following steps is also provided. An anti-reflective layer is formed on a substrate. A plurality of color filters is formed on the anti-reflective layer, wherein parts of the anti-reflective layer right below at least two of the color filters have different thicknesses.