Vat Photopolymerization for 3D Semiconductor Encapsulation
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Solution Overview
Problem
Current semiconductor device packaging technologies face challenges in creating complex three-dimensional structures and effectively mitigating physical and thermal stresses, while also integrating functional components like microfluidic channels and inductors within the package.
Innovation Solution
The method employs vat photopolymerization, where a semiconductor device is immersed in a liquid encapsulation material, and specific areas are irradiated to polymerize the material, allowing for the formation of a three-dimensional structure by incrementally moving the device within the resin bath, enabling the creation of overmolds with unique features and internal cavities that can include microfluidic channels and inductors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If traditional packaging methods are used, then manufacturing simplicity is maintained, but the ability to create complex three-dimensional structures is limited
Solution Approach 1:
The patent applies vat photopolymerization to transform the encapsulation process from traditional molding to a light-based selective curing process. This parameter change enables complex three-dimensional structures to be formed by controlling light exposure patterns on liquid resin, achieving high-resolution 3D structures while maintaining a relatively simple manufacturing workflow through digital light processing control.
2Stress or pressure
If traditional encapsulation methods are used, then manufacturing process is simple, but stress mitigation capability is insufficient
Solution Approach 1:
The patent uses selective photopolymerization to create encapsulation structures with locally optimized properties. By controlling light exposure, the resin cures only in specific regions where encapsulation is needed, allowing for stress-mitigating structures to be formed in targeted areas while maintaining simplicity in other regions. This local quality approach enables stress management without requiring complex overall packaging designs.
3Adaptability or versatility
If conventional packaging technologies are used, then manufacturing throughput is maintained, but integration of functional components is limited
Solution Approach 1:
The patent demonstrates that vat photopolymerization creates a universal encapsulation platform that can integrate multiple functional components (microfluidic channels, inductors, sensors, etc.) within a single packaging process. The light-based curing mechanism allows different materials and structures to be formed sequentially in the same resin bath, enabling multi-functional integration without requiring separate manufacturing steps for each component, thus maintaining high throughput while achieving versatility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables high-resolution, high-throughput encapsulation of semiconductor devices with integrated functional structures, reducing stress and allowing for the incorporation of complex three-dimensional features and functional components, enhancing packaging efficiency and precision.
Implementation Method 1
irradiating portions of the liquid encapsulation material to polymerize the liquid encapsulation material
Data Source
AI summary
In described examples, a method for encapsulating a semiconductor device includes the steps of immersing a layer of the semiconductor device in a liquid encapsulation material, irradiating portions of the liquid encapsulation material to polymerize the liquid encapsulation material, and moving the semiconductor device further from a surface of the liquid encapsulation material proximate to the layer. Immersing the semiconductor device is performed to cover a layer of the device in the liquid encapsulation material. Targeted locations of the liquid encapsulation material covering the layer are irradiated to form solid encapsulation material. The semiconductor device is moved from a surface of the liquid encapsulation material so that a new layer of the semiconductor device and/or of the solid encapsulation material can be covered by the liquid encapsulation material. The irradiating and moving steps are then repeated until a three dimensional structure on the semiconductor device is formed using the solid encapsulation material.